IPD90P04P4L04ATMA2 vs IPD30N06S2L13ATMA4 Comparison
Detailed side-by-side comparison of IPD90P04P4L04ATMA2 by Infineon and IPD30N06S2L13ATMA4 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Infineon
IPD90P04P4L04ATMA2 - -40V P-Ch 90A 4.3mOhm OptiMOS | Infineon
IPD90P04P4L04ATMA2 β ActiveInfineon
IPD30N06S2L13ATMA4 - 55V 30A N-Channel OptiMOS MOSFET | Infineon
IPD30N06S2L13ATMA4 β ActiveSpecification Comparison
| Parameter | IPD90P04P4L04ATMA2 | IPD30N06S2L13ATMA4 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $1.22 | $0.48 |
| Part Number | IPD90P04P4L04ATMA2 | β |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Family | OptiMOS-P2 | β |
| Channel Type | P-Channel | N-Channel |
| Drain-Source Voltage (Vds) | -40 V | 55 V |
| Continuous Drain Current (Id) at Tc=25C | -90 A | β |
| Power Dissipation (Pd) at Tc=25C | 125 W | β |
| On-State Resistance Rds(on) typ at Vgs=-10V | 4.3 mOhm | β |
| Gate Threshold Voltage Vgs(th) typ | [DATA_NEEDED: Vgs(th) typical value] | β |
| Maximum Junction Temperature | 175 C | β |
| Operating Temperature Range | -55 C to +175 C | β |
| Package | PG-TO252-3-313 (DPAK) | PG-TO252-3-11 (DPAK) |
| Mounting Type | Surface Mount | Surface Mount |
| Number of Pins | 3 (2 + Tab) | β |
| Automotive Qualification | AEC-Q101 qualified | AEC-Q101 qualified |
| RoHS Status | Compliant | β |
| MSL Level | [DATA_NEEDED: MSL rating] | β |
| Part Family | β | OptiMOS |
| Mode | β | Enhancement |
| Continuous Drain Current (Id) | β | 30 A (Tc) |
| Power Dissipation (Pd) | β | 136 W (Tc) |
| Operating Temperature | β | -55 Β°C to +175 Β°C (Tj) |
| MSL (Moisture Sensitivity Level) | β | MSL1 (per JEDEC J-STD-020, up to 260 Β°C peak reflow) |
| Lead-Free / RoHS | β | Yes (Green Package) |
| Avalanche Tested | β | 100 % production-tested |
| Technology | β | Planar (OptiMOS) |
| On-State Resistance (Rds(on)) | β | [DATA_NEEDED: exact typ/max Rds(on) at Vgs=10V and at Vgs=4.5V] |
| Gate-Source Threshold (Vgs(th)) | β | Logic-level (typ [DATA_NEEDED: Vth typ/min/max]) |
| Total Gate Charge (Qg) | β | [DATA_NEEDED: Qg @ Vgs=10V, Id=30A] |
| Input Capacitance (Ciss) | β | [DATA_NEEDED: Ciss typ at Vds=25V] |
| Diode Reverse Recovery (trr) | β | [DATA_NEEDED: trr typ] |
| Pin Count | β | 3 (Drain tab + Gate + Source) |
| Tape and Reel Packaging | β | Yes (T&R per IEC 60286-3) |