IPD90P04P4L04ATMA2 vs IPD30N06S2L13ATMA4 Ikinahambing
Detalyadong pagkakahiwalay na pagkakahambing ng IPD90P04P4L04ATMA2 sa pamamagitan ng Infineon at IPD30N06S2L13ATMA4 sa pamamagitan ng Infineon. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.
Infineon
IPD90P04P4L04ATMA2 - -40V P-Ch 90A 4.3mOhm OptiMOS | Infineon
IPD90P04P4L04ATMA2 ✓ NakahandaInfineon
IPD30N06S2L13ATMA4 - 55V 30A N-Channel OptiMOS MOSFET | Infineon
IPD30N06S2L13ATMA4 ✓ NakahandaPagsanggunian na paghahambing
| Parametro | IPD90P04P4L04ATMA2 | IPD30N06S2L13ATMA4 |
|---|---|---|
| Brand | Infineon | Infineon |
| Kategorya | MOSFETs | MOSFETs |
| Katayuan ng Lifecycle | Aktibo | Aktibo |
| Part Number | IPD90P04P4L04ATMA2 | — |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Family | OptiMOS-P2 | — |
| Channel Type | P-Channel | N-Channel |
| Drain-Source Voltage (Vds) | -40 V | 55 V |
| Continuous Drain Current (Id) at Tc=25C | -90 A | — |
| Power Dissipation (Pd) at Tc=25C | 125 W | — |
| On-State Resistance Rds(on) typ at Vgs=-10V | 4.3 mOhm | — |
| Gate Threshold Voltage Vgs(th) typ | [DATA_NEEDED: Vgs(th) typical value] | — |
| Maximum Junction Temperature | 175 C | — |
| Hanay ng Temperature na Operasyon | -55 C to +175 C | — |
| Packhaging | PG-TO252-3-313 (DPAK) | PG-TO252-3-11 (DPAK) |
| Uri ng Pagpapasok | Surface Mount | Surface Mount |
| Bilang ng Pins | 3 (2 + Tab) | — |
| Automotive Qualification | AEC-Q101 qualified | AEC-Q101 qualified |
| Tindminan RoHS | Compliant | — |
| Level ng MSL | [DATA_NEEDED: MSL rating] | — |
| Part Family | — | OptiMOS |
| Mode | — | Enhancement |
| Continuous Drain Current (Id) | — | 30 A (Tc) |
| Power Dissipation (Pd) | — | 136 W (Tc) |
| Temperature na Operasyon | — | -55 °C to +175 °C (Tj) |
| MSL (Moisture Sensitivity Level) | — | MSL1 (per JEDEC J-STD-020, up to 260 °C peak reflow) |
| Lead-Free / RoHS | — | Yes (Green Package) |
| Avalanche Tested | — | 100 % production-tested |
| Technology | — | Planar (OptiMOS) |
| On-State Resistance (Rds(on)) | — | [DATA_NEEDED: exact typ/max Rds(on) at Vgs=10V and at Vgs=4.5V] |
| Gate-Source Threshold (Vgs(th)) | — | Logic-level (typ [DATA_NEEDED: Vth typ/min/max]) |
| Total Gate Charge (Qg) | — | [DATA_NEEDED: Qg @ Vgs=10V, Id=30A] |
| Input Capacitance (Ciss) | — | [DATA_NEEDED: Ciss typ at Vds=25V] |
| Diode Reverse Recovery (trr) | — | [DATA_NEEDED: trr typ] |
| Bilang ng Pin | — | 3 (Drain tab + Gate + Source) |
| Tape and Reel Packaging | — | Yes (T&R per IEC 60286-3) |