IPG20N06S2L65AATMA1 vs IPG16N10S461AATMA1 Comparison
Detailed side-by-side comparison of IPG20N06S2L65AATMA1 by Infineon and IPG16N10S461AATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Specification Comparison
| Parameter | IPG20N06S2L65AATMA1 | IPG16N10S461AATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Series | OptiMOS | — |
| FET Type | Dual N-Channel (Half Bridge / Independent) | — |
| Drain-to-Source Voltage (VDS) | 55 V | — |
| Continuous Drain Current (ID) | 20 A (per channel) | 16 A |
| Power Dissipation (PD) | 43 W | — |
| Gate Threshold (VGS(th)) | Logic-Level | — |
| Technology | OptiMOS Trench MOSFET | OptiMOS™ trench |
| Package | PG-TDSON-8-10 (TDSON-8 EP, wettable flank) | PG-TDSON-8-10 (Wettable Flank) |
| Mounting Type | Surface Mount | Surface Mount |
| Operating Temperature | -55 C to +175 C | — |
| AEC-Q101 Qualification | Yes | — |
| MSL Level | MSL1 (peak reflow 260 C) | [DATA_NEEDED: MSL rating] |
| RoHS Status | Compliant (Green Product) | Compliant |
| Avalanche Tested | 100% (per datasheet) | — |
| AOI Compatible | Yes (wettable flank) | — |
| Product Type | — | Dual N-Channel MOSFET Array |
| Drain-Source Voltage (VDS) | — | 100 V |
| On-Resistance R_DS(on) typ. | — | 61 mΩ |
| Total Power Dissipation (Ptot) | — | 29 W (T_C = 25°C) |
| Configuration | — | 2 N-Channel (Dual, separate) |
| Gate Threshold Voltage V_GS(th) typ. | — | [DATA_NEEDED: gate threshold voltage] |
| Maximum Junction Temperature | — | 175 °C |
| Operating Temperature Range | — | -55 °C to +175 °C |
| Terminal Count | — | 8 |
| Built-in Body Diode | — | Yes |
| Channel Mode | — | Enhancement |