IPG20N06S2L65AATMA1 vs IPG16N10S461AATMA1 Pengandingan
Pengandingan Sisi Kiri Sisi Kanan Terperinci IPG20N06S2L65AATMA1 disebabkan oleh Infineon dan IPG16N10S461AATMA1 disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.
Pengandingan Spesifikasi
| Parametr | IPG20N06S2L65AATMA1 | IPG16N10S461AATMA1 |
|---|---|---|
| Merek | Infineon | Infineon |
| Kategori | MOSFETs | MOSFETs |
| Status Lingkungan Hidup | Aktif | Aktif |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Series | OptiMOS | — |
| FET Type | Dual N-Channel (Half Bridge / Independent) | — |
| Drain-to-Source Voltage (VDS) | 55 V | — |
| Continuous Drain Current (ID) | 20 A (per channel) | 16 A |
| Power Dissipation (PD) | 43 W | — |
| Gate Threshold (VGS(th)) | Logic-Level | — |
| Technology | OptiMOS Trench MOSFET | OptiMOS™ trench |
| Kemasan | PG-TDSON-8-10 (TDSON-8 EP, wettable flank) | PG-TDSON-8-10 (Wettable Flank) |
| Jenis Pemasangan | Surface Mount | Surface Mount |
| Suhu Operasi | -55 C to +175 C | — |
| AEC-Q101 Qualification | Yes | — |
| Aras MSL | MSL1 (peak reflow 260 C) | [DATA_NEEDED: MSL rating] |
| Status RoHS | Compliant (Green Product) | Compliant |
| Avalanche Tested | 100% (per datasheet) | — |
| AOI Compatible | Yes (wettable flank) | — |
| Product Type | — | Dual N-Channel MOSFET Array |
| Drain-Source Voltage (VDS) | — | 100 V |
| On-Resistance R_DS(on) typ. | — | 61 mΩ |
| Total Power Dissipation (Ptot) | — | 29 W (T_C = 25°C) |
| Configuration | — | 2 N-Channel (Dual, separate) |
| Gate Threshold Voltage V_GS(th) typ. | — | [DATA_NEEDED: gate threshold voltage] |
| Maximum Junction Temperature | — | 175 °C |
| Gambaran Suhu Operasi | — | -55 °C to +175 °C |
| Terminal Count | — | 8 |
| Built-in Body Diode | — | Yes |
| Channel Mode | — | Enhancement |