IPG20N06S2L65ATMA1 vs BSC042NE7NS3GATMA1 Comparison

Detailed side-by-side comparison of IPG20N06S2L65ATMA1 by Infineon and BSC042NE7NS3GATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

Infineon
IPG20N06S2L65ATMA1

IPG20N06S2L65ATMA1 - Dual N-Ch 55V 20A MOSFET | Infineon

IPG20N06S2L65ATMA1 βœ“ Active
Infineon
BSC042NE7NS3GATMA1

BSC042NE7NS3GATMA1 - 75V N-Ch OptiMOS 3 MOSFET | Infineon

BSC042NE7NS3GATMA1 βœ“ Active

Specification Comparison

Parameter IPG20N06S2L65ATMA1 BSC042NE7NS3GATMA1
Brand Infineon Infineon
Category MOSFETs MOSFETs
Lifecycle Status Active Active
Stock Status In Stock In Stock
Unit Price (USD) $1.05 $1.24
FET Type Dual N-Channel, Logic Level β€”
Technology OptiMOS-T2 (Planar Trench 55V) OptiMOS 3
Drain-Source Voltage (VDS) 55 V 75 V
Continuous Drain Current (ID) 20 A per channel β€”
RDS(on) at VGS=10V 65 mΞ© typical β€”
Gate Threshold Voltage (VGS(th)) 1.0 V to 2.5 V (logic level) β€”
Total Power Dissipation (Ptot) 43 W β€”
Operating Temperature Range -55Β°C to +175Β°C -55C to +150C
Package PG-TDSON-8-4 (TDSON-8 EP) PG-TDSON-8-1 (SuperSO8 5x6 mm)
Mounting Type Surface Mount Surface Mount
MSL Level MSL1 (260Β°C peak reflow) 1
Avalanche Rating 100% Avalanche Tested β€”
Automotive Qualification AEC-Q101 Qualified β€”
RoHS Compliance RoHS Compliant (Green Product) β€”
Packaging Tape & Reel (TMA1 suffix) β€”
Manufacturer β€” Infineon Technologies
Part Number β€” BSC042NE7NS3GATMA1
Transistor Type β€” N-Channel MOSFET
Continuous Drain Current (ID) at Ta β€” 19 A
Continuous Drain Current (ID) at Tc β€” 100 A
RDS(on) max at VGS=10V β€” 4.2 mOhm
Gate-Source Voltage (VGS) max β€” +/-20 V
Gate Threshold Voltage (VGS(th)) typ β€” 1.7 V
Power Dissipation (PD) at Ta β€” 2.5 W
Power Dissipation (PD) at Tc β€” 125 W
RoHS Status β€” Compliant

Datasheets & Resources

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