IPG20N06S2L65ATMA1 vs BSC042NE7NS3GATMA1 Perbandingan
Perbandingan bersamaan detil IPG20N06S2L65ATMA1 dari Infineon dan BSC042NE7NS3GATMA1 dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.
Perbandingan Spesifikasi
| Parameter Umum | IPG20N06S2L65ATMA1 | BSC042NE7NS3GATMA1 |
|---|---|---|
| Merek | Infineon | Infineon |
| Kategori | MOSFETs | MOSFETs |
| Status Lingkungan Hidup | Aktif | Aktif |
| FET Type | Dual N-Channel, Logic Level | — |
| Technology | OptiMOS-T2 (Planar Trench 55V) | OptiMOS 3 |
| Drain-Source Voltage (VDS) | 55 V | 75 V |
| Continuous Drain Current (ID) | 20 A per channel | — |
| RDS(on) at VGS=10V | 65 mΩ typical | — |
| Gate Threshold Voltage (VGS(th)) | 1.0 V to 2.5 V (logic level) | — |
| Total Power Dissipation (Ptot) | 43 W | — |
| Rentang Suhu Kerja | -55°C to +175°C | -55C to +150C |
| Paket | PG-TDSON-8-4 (TDSON-8 EP) | PG-TDSON-8-1 (SuperSO8 5x6 mm) |
| Tipe Mounting | Surface Mount | Surface Mount |
| Level MSL | MSL1 (260°C peak reflow) | 1 |
| Avalanche Rating | 100% Avalanche Tested | — |
| Automotive Qualification | AEC-Q101 Qualified | — |
| RoHS Compliance | RoHS Compliant (Green Product) | — |
| Packaging | Tape & Reel (TMA1 suffix) | — |
| Manufacturer | — | Infineon Technologies |
| Part Number | — | BSC042NE7NS3GATMA1 |
| Tipe Transistor | — | N-Channel MOSFET |
| Continuous Drain Current (ID) at Ta | — | 19 A |
| Continuous Drain Current (ID) at Tc | — | 100 A |
| RDS(on) max at VGS=10V | — | 4.2 mOhm |
| Gate-Source Voltage (VGS) max | — | +/-20 V |
| Gate Threshold Voltage (VGS(th)) typ | — | 1.7 V |
| Power Dissipation (PD) at Ta | — | 2.5 W |
| Power Dissipation (PD) at Tc | — | 125 W |
| Status RoHS | — | Compliant |