IPG20N06S2L65ATMA1 vs BSC042NE7NS3GATMA1 Ikinahambing
Detalyadong pagkakahiwalay na pagkakahambing ng IPG20N06S2L65ATMA1 sa pamamagitan ng Infineon at BSC042NE7NS3GATMA1 sa pamamagitan ng Infineon. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.
Pagsanggunian na paghahambing
| Parametro | IPG20N06S2L65ATMA1 | BSC042NE7NS3GATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Kategorya | MOSFETs | MOSFETs |
| Katayuan ng Lifecycle | Aktibo | Aktibo |
| FET Type | Dual N-Channel, Logic Level | — |
| Technology | OptiMOS-T2 (Planar Trench 55V) | OptiMOS 3 |
| Drain-Source Voltage (VDS) | 55 V | 75 V |
| Continuous Drain Current (ID) | 20 A per channel | — |
| RDS(on) at VGS=10V | 65 mΩ typical | — |
| Gate Threshold Voltage (VGS(th)) | 1.0 V to 2.5 V (logic level) | — |
| Total Power Dissipation (Ptot) | 43 W | — |
| Hanay ng Temperature na Operasyon | -55°C to +175°C | -55C to +150C |
| Packhaging | PG-TDSON-8-4 (TDSON-8 EP) | PG-TDSON-8-1 (SuperSO8 5x6 mm) |
| Uri ng Pagpapasok | Surface Mount | Surface Mount |
| Level ng MSL | MSL1 (260°C peak reflow) | 1 |
| Avalanche Rating | 100% Avalanche Tested | — |
| Automotive Qualification | AEC-Q101 Qualified | — |
| RoHS Compliance | RoHS Compliant (Green Product) | — |
| Packaging | Tape & Reel (TMA1 suffix) | — |
| Manufacturer | — | Infineon Technologies |
| Part Number | — | BSC042NE7NS3GATMA1 |
| Uri ng Transistor | — | N-Channel MOSFET |
| Continuous Drain Current (ID) at Ta | — | 19 A |
| Continuous Drain Current (ID) at Tc | — | 100 A |
| RDS(on) max at VGS=10V | — | 4.2 mOhm |
| Gate-Source Voltage (VGS) max | — | +/-20 V |
| Gate Threshold Voltage (VGS(th)) typ | — | 1.7 V |
| Power Dissipation (PD) at Ta | — | 2.5 W |
| Power Dissipation (PD) at Tc | — | 125 W |
| Tindminan RoHS | — | Compliant |