IPG20N06S2L65ATMA1 vs BSC042NE7NS3GATMA1 比較
詳細並排比較 IPG20N06S2L65ATMA1 由 Infineon 與 BSC042NE7NS3GATMA1 由 Infineon. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況，以找出最符合您設計需求的元件。
規格比較
| 參數 | IPG20N06S2L65ATMA1 | BSC042NE7NS3GATMA1 |
|---|---|---|
| 品牌 | Infineon | Infineon |
| 類別 | MOSFETs | MOSFETs |
| 生命週期狀態 | 啟用中 | 啟用中 |
| FET Type | Dual N-Channel, Logic Level | — |
| Technology | OptiMOS-T2 (Planar Trench 55V) | OptiMOS 3 |
| Drain-Source Voltage (VDS) | 55 V | 75 V |
| Continuous Drain Current (ID) | 20 A per channel | — |
| RDS(on) at VGS=10V | 65 mΩ typical | — |
| Gate Threshold Voltage (VGS(th)) | 1.0 V to 2.5 V (logic level) | — |
| Total Power Dissipation (Ptot) | 43 W | — |
| 工作溫度範圍 | -55°C to +175°C | -55C to +150C |
| 封裝 | PG-TDSON-8-4 (TDSON-8 EP) | PG-TDSON-8-1 (SuperSO8 5x6 mm) |
| 安裝類型 | Surface Mount | Surface Mount |
| MSL 等級 | MSL1 (260°C peak reflow) | 1 |
| Avalanche Rating | 100% Avalanche Tested | — |
| Automotive Qualification | AEC-Q101 Qualified | — |
| RoHS Compliance | RoHS Compliant (Green Product) | — |
| Packaging | Tape & Reel (TMA1 suffix) | — |
| Manufacturer | — | Infineon Technologies |
| Part Number | — | BSC042NE7NS3GATMA1 |
| 電晶體類型 | — | N-Channel MOSFET |
| Continuous Drain Current (ID) at Ta | — | 19 A |
| Continuous Drain Current (ID) at Tc | — | 100 A |
| RDS(on) max at VGS=10V | — | 4.2 mOhm |
| Gate-Source Voltage (VGS) max | — | +/-20 V |
| Gate Threshold Voltage (VGS(th)) typ | — | 1.7 V |
| Power Dissipation (PD) at Ta | — | 2.5 W |
| Power Dissipation (PD) at Tc | — | 125 W |
| RoHS 狀態 | — | Compliant |