IPG20N10S4L22AATMA1 vs IPD50N06S409ATMA2 Comparison

Detailed side-by-side comparison of IPG20N10S4L22AATMA1 by Infineon and IPD50N06S409ATMA2 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

Infineon
IPG20N10S4L22AATMA1 IPG20N10S4L22AATMA1 - 100V Dual N-ch 22mΞ© MOSFET | Infineon

IPG20N10S4L22AATMA1 - 100V Dual N-ch 22mΞ© MOSFET | Infineon

IPG20N10S4L22AATMA1 βœ“ Active

Specification Comparison

Parameter IPG20N10S4L22AATMA1 IPD50N06S409ATMA2
Brand Infineon Infineon
Category MOSFETs MOSFETs
Lifecycle Status Active Active
Stock Status In Stock In Stock
Unit Price (USD) $1.45 $0.49
FET Type Dual N-Channel β€”
Drain-Source Voltage (V<sub>DS</sub>) 100 V β€”
Continuous Drain Current (I<sub>D</sub>) 20 A β€”
On-State Resistance (R<sub>DS(on)</sub>) 22 mΞ© (typical) β€”
Power Dissipation (P<sub>D</sub>) 60 W β€”
Gate-Source Voltage (V<sub>GS</sub>) Β±20 V β€”
Gate Threshold (V<sub>GS(th)</sub>) [DATA_NEEDED: Vgs(th)] β€”
Mounting Type Surface Mount Surface Mount
Package PG-TDSON-8-10 (Wettable Flank) PG-TO252-3-11 (DPAK)
Lead Configuration Wettable Flank β€”
Automotive Qualification AEC-Q101 AEC-Q101
Technology OptiMOS T2 N-Channel MOSFET (OptiMOS)
Operating Temperature -55Β°C to +175Β°C β€”
RoHS Status Compliant Compliant
Channel Count 2 (dual independent) β€”
Drain-Source Voltage (VDS) β€” 60 V
Continuous Drain Current (ID) at Tc β€” 50 A
On-Resistance R<sub>DS(on)</sub> max at VGS=10V β€” 9 mΞ©
Gate-Source Voltage (VGS) max β€” [DATA_NEEDED: VGS max rating]
Gate Threshold Voltage (VGS(th)) β€” [DATA_NEEDED: VGS(th) typical]
Total Gate Charge (Qg) β€” [DATA_NEEDED: Qg typical]
Power Dissipation (Pd) at Tc β€” 71 W
Operating Junction Temperature β€” -55 Β°C to +175 Β°C
Pin Count β€” 3 (2 + Tab)
Lead-Free / Halogen-Free β€” [DATA_NEEDED]

Datasheets & Resources

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