IPG20N10S4L22AATMA1 vs IPD50N06S409ATMA2 Pengandingan
Pengandingan Sisi Kiri Sisi Kanan Terperinci IPG20N10S4L22AATMA1 disebabkan oleh Infineon dan IPD50N06S409ATMA2 disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.
Pengandingan Spesifikasi
| Parametr | IPG20N10S4L22AATMA1 | IPD50N06S409ATMA2 |
|---|---|---|
| Merek | Infineon | Infineon |
| Kategori | MOSFETs | MOSFETs |
| Status Lingkungan Hidup | Aktif | Aktif |
| FET Type | Dual N-Channel | — |
| Drain-Source Voltage (V<sub>DS</sub>) | 100 V | — |
| Continuous Drain Current (I<sub>D</sub>) | 20 A | — |
| On-State Resistance (R<sub>DS(on)</sub>) | 22 mΩ (typical) | — |
| Power Dissipation (P<sub>D</sub>) | 60 W | — |
| Gate-Source Voltage (V<sub>GS</sub>) | ±20 V | — |
| Gate Threshold (V<sub>GS(th)</sub>) | [DATA_NEEDED: Vgs(th)] | — |
| Jenis Pemasangan | Surface Mount | Surface Mount |
| Kemasan | PG-TDSON-8-10 (Wettable Flank) | PG-TO252-3-11 (DPAK) |
| Lead Configuration | Wettable Flank | — |
| Automotive Qualification | AEC-Q101 | AEC-Q101 |
| Technology | OptiMOS T2 | N-Channel MOSFET (OptiMOS) |
| Suhu Operasi | -55°C to +175°C | — |
| Status RoHS | Compliant | Compliant |
| Channel Count | 2 (dual independent) | — |
| Drain-Source Voltage (VDS) | — | 60 V |
| Continuous Drain Current (ID) at Tc | — | 50 A |
| On-Resistance R<sub>DS(on)</sub> max at VGS=10V | — | 9 mΩ |
| Gate-Source Voltage (VGS) max | — | [DATA_NEEDED: VGS max rating] |
| Gate Threshold Voltage (VGS(th)) | — | [DATA_NEEDED: VGS(th) typical] |
| Total Gate Charge (Qg) | — | [DATA_NEEDED: Qg typical] |
| Power Dissipation (Pd) at Tc | — | 71 W |
| Suhu Hubungan Operasi | — | -55 °C to +175 °C |
| Kiraan Pin | — | 3 (2 + Tab) |
| Lead-Free / Halogen-Free | — | [DATA_NEEDED] |