IPG20N10S4L22AATMA1 vs IPD50N06S409ATMA2 比較
詳細並排比較 IPG20N10S4L22AATMA1 由 Infineon 與 IPD50N06S409ATMA2 由 Infineon. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況，以找出最符合您設計需求的元件。
規格比較
| 參數 | IPG20N10S4L22AATMA1 | IPD50N06S409ATMA2 |
|---|---|---|
| 品牌 | Infineon | Infineon |
| 類別 | MOSFETs | MOSFETs |
| 生命週期狀態 | 啟用中 | 啟用中 |
| FET Type | Dual N-Channel | — |
| Drain-Source Voltage (V<sub>DS</sub>) | 100 V | — |
| Continuous Drain Current (I<sub>D</sub>) | 20 A | — |
| On-State Resistance (R<sub>DS(on)</sub>) | 22 mΩ (typical) | — |
| Power Dissipation (P<sub>D</sub>) | 60 W | — |
| Gate-Source Voltage (V<sub>GS</sub>) | ±20 V | — |
| Gate Threshold (V<sub>GS(th)</sub>) | [DATA_NEEDED: Vgs(th)] | — |
| 安裝類型 | Surface Mount | Surface Mount |
| 封裝 | PG-TDSON-8-10 (Wettable Flank) | PG-TO252-3-11 (DPAK) |
| Lead Configuration | Wettable Flank | — |
| Automotive Qualification | AEC-Q101 | AEC-Q101 |
| Technology | OptiMOS T2 | N-Channel MOSFET (OptiMOS) |
| 工作溫度 | -55°C to +175°C | — |
| RoHS 狀態 | Compliant | Compliant |
| Channel Count | 2 (dual independent) | — |
| Drain-Source Voltage (VDS) | — | 60 V |
| Continuous Drain Current (ID) at Tc | — | 50 A |
| On-Resistance R<sub>DS(on)</sub> max at VGS=10V | — | 9 mΩ |
| Gate-Source Voltage (VGS) max | — | [DATA_NEEDED: VGS max rating] |
| Gate Threshold Voltage (VGS(th)) | — | [DATA_NEEDED: VGS(th) typical] |
| Total Gate Charge (Qg) | — | [DATA_NEEDED: Qg typical] |
| Power Dissipation (Pd) at Tc | — | 71 W |
| 工作接面溫度 | — | -55 °C to +175 °C |
| 腳位數 | — | 3 (2 + Tab) |
| Lead-Free / Halogen-Free | — | [DATA_NEEDED] |