IPL60R125P7AUMA1 - 600V CoolMOS P7 MOSFET 125mΩ 27A | Infineon
MPN: IPL60R125P7AUMA1 ✓ Active| Qty | Unit Price | Extended |
|---|---|---|
| 1 | $2.85 | $2.85 |
| 10 | $2.65 | $26.50 |
| 100 | $2.4 | $240.00 |
| 500 | $2.18 | $1,090.00 |
| 1,000 | $1.95 | $1,950.00 |
IPL60R125P7AUMA1 Overview
A power MOSFET is a voltage-controlled semiconductor switch that uses an insulated-gate structure to modulate current flow between drain and source terminals. Superjunction MOSFETs replace the conventional planar or trench DMOS drift region with alternating P- and N-doped pillars, which simultaneously raise the breakdown voltage and reduce on-state resistance for a given silicon area. This technology belongs to the broader hierarchy: power MOSFET -> discrete semiconductor -> power transistor -> power management building block.
Key specifications include 600 V drain-source breakdown, 125 mOhm max RDS(on) at 25 C, 27 A continuous ID at 25 C case temperature, ultra-low total gate charge (Qg) of around 36 nC, very low Eon and Eoff switching energies, integrated Zener-protected gate, and a kelvin-source pin for gate-drive return. The ThinPAK 8x8 package exposes the drain tab on top of the package for double-sided cooling.
The CoolMOS P7 platform is built on Infineon's superjunction process with a refined cell pitch and integrated gate Zener diode. The exposed-drain ThinPAK 8x8 package reduces source inductance versus D2PAK by approximately 70 percent, lowering voltage overshoot during hard switching and enabling higher switching frequencies without compromising EMI.
Typical applications include telecom rectifiers, server and datacom SMPS, industrial PFC and LLC stages, solar inverters, EV on-board chargers, and high-frequency welding/induction power stages. The combination of low switching loss and small ThinPAK footprint suits compact, fan-cooled designs where heat-sinking area is limited.
When designing with this device, ensure a kelvin-source connection to the gate driver ground to fully exploit the low-inductance ThinPAK package, keep gate-drive loop area minimal, and respect the dv/dt-induced turn-on risk with a properly sized gate-pull-down resistance.
This page synthesizes distributor pricing, drop-in alternatives, and practical design notes not found in the manufacturer datasheet.
Drop-in alternatives for IPL60R125P7AUMA1 — same package, pin-to-pin compatible. Different-package parts requiring PCB rework are excluded.
Variants in this series
Same-series models that are drop-in compatible with IPL60R125P7AUMA1 (same form factor and footprint) — differing in Package, Technology, Mounting Type, Operating Junction Temperature, Operating Temperature Range.
Quick Comparison Tool — Select alternative parts for side-by-side comparison:
IPL60R105P7AUMA1
✅ Drop-In✓ In Stock
$0.82 / Unit
View Datasheet →IPB60R280P7ATMA1
✅ Drop-In✓ In Stock
$0.88 / Unit
View Datasheet →VBQE165R20S
✅ Drop-In📋 Reference alternative (not in catalog)
IPW60R037P7XKSA1
✅ Drop-In✓ In Stock
$3.55 / Unit
View Datasheet →IPL60R125P7AUMA1 Maximum Ratings & Electrical Characteristics
| Manufacturer | Infineon Technologies |
| Product Family | CoolMOS P7 |
| Technology | Superjunction (SJ) N-channel MOSFET |
| Drain-Source Voltage (VDS) | 600 V |
| Continuous Drain Current (ID, Tc=25C) | 27 A |
| On-State Resistance RDS(on) max | 125 mOhm |
| Gate Charge (Qg, typ) | 36 nC |
| Total Gate Charge Qg (typ) | 36 nC |
| Gate-Source Voltage (VGS) | +/-20 V (max) |
| Gate Threshold Voltage VGS(th), typ | 3.5 V |
| Operating Junction Temperature | -55 C to +150 C |
| Package | ThinPAK 8x8 (4-pin + exposed pad) |
| Mounting Type | Surface Mount |
| Moisture Sensitivity Level (MSL) | MSL 2 (per JEDEC J-STD-020) |
| RoHS Status | Compliant |
| Pin Configuration | Drain Pin 5, Gate Pin 1, Power Source Pin 3-4, Driver Source Pin 2 |
IPL60R125P7AUMA1 Pin Configuration
| Pin 1 | Gate — MOSFET gate drive input |
| Pin 2 | Driver Source (Kelvin) — Kelvin-source connection for gate driver return |
| Pin 3 | Power Source — MOSFET source (high current) |
| Pin 4 | Power Source — MOSFET source (high current) |
| Pin 5 | Drain (Tab) — MOSFET drain, exposed top tab for cooling |
Safe Operating Area (DC)
Typical Applications
IPL60R125P7AUMA1 is suitable for 7 applications: Telecom and Server SMPS, Industrial PFC Boost Stage, Solar Inverter DC-DC Stage, EV On-Board Charger PFC/LLC, High-Frequency Induction Heating, Server and Datacom Hot-Swap/ORing, Renewable Energy Micro-Inverter PFC.
Telecom and Server SMPS
The IPL60R125P7AUMA1 fits telecom and server switched-mode power supplies because its 600 V VDS rating handles 380-400 V rectified mains with adequate surge margin, while the 125 mOhm RDS(on) and 27 A continuous ID meet the typical 1-3 kW power range. The 36 nC total gate charge (Qg) keeps gate-driver loss under 0.5 W at 100 kHz switching, enabling high-density LLC and PFC stages. The ThinPAK 8x8 package's top-exposed drain supports double-sided cooling, ideal for compact 1U/2U rectifier modules where PCB area is constrained. Pairing with a 2EDN7533RXTMA1 gate driver minimizes dead time and switching loss. Compared with planar 600 V MOSFETs, the CoolMOS P7 superjunction reduces switching loss by 30-50 percent at the same RDS(on), allowing higher switching frequency and smaller magnetics.
Recommended
Industrial PFC Boost Stage
In a continuous-conduction-mode PFC boost converter operating from universal mains (85-265 VAC), the IPL60R125P7AUMA1 handles the 400 V DC bus with 125 mOhm RDS(on) and 27 A peak current. The CoolMOS P7 platform's low Eon/Eoff energies reduce switching loss at the typical 65-130 kHz switching frequency, improving efficiency from 96 percent to above 98 percent at full load. The integrated Zener-protected gate simplifies the drive circuit and improves ESD robustness during production handling. The ThinPAK 8x8 footprint enables a single-sided PCB layout with minimal source inductance, suppressing drain-voltage overshoot. For 3-5 kW industrial air-conditioner and motor-drive PFC stages, this MOSFET offers the best price-performance balance in the 600 V/125 mOhm class.
Recommended
Solar Inverter DC-DC Stage
In a solar string inverter's DC-DC stage (boost or interleaved LLC), the IPL60R125P7AUMA1's 600 V rating covers 1500 V DC-link surge transients with sufficient margin. The 125 mOhm RDS(on) and 36 nC Qg reduce total loss versus conventional 600 V planar MOSFETs by about 30-40 percent at 100 kHz, allowing longer continuous operation at 80 percent of rated current without active cooling. The ThinPAK 8x8's exposed drain pad simplifies heatsink attachment on either side of the PCB, supporting IP65-rated outdoor enclosure designs. With its low reverse-recovery charge, the body diode can serve synchronous-rectifier or hard-switched use without external anti-parallel diodes in single-transistor topologies.
Recommended
EV On-Board Charger PFC/LLC
In a 6.6 kW or 11 kW EV on-board charger (OBC), the IPL60R125P7AUMA1 can be paralleled in PFC boost or used as the primary-side switch in an LLC stage with 600 V bus. Its 27 A continuous ID rating matches the typical 6.6 kW OBC primary current when two devices are paralleled, while the low Qg reduces drive-stage loss for higher-frequency designs targeting smaller magnetics. The AEC-Q101-qualified variants in the same package are preferred for automotive OBC reliability. ThinPAK 8x8's top-exposed drain enables double-sided cooling for compact liquid-cooled enclosures. Compared with IGBT, the MOSFET's lack of tail current halves turn-off loss and improves light-load efficiency.
Recommended
High-Frequency Induction Heating
Resonant induction-heating power stages typically run at 100-300 kHz; the IPL60R125P7AUMA1's low Coss and Crss and 36 nC Qg minimize capacitive switching loss at these frequencies. The 600 V VDS rating handles resonant tank overshoot safely with proper snubber design, and the 27 A peak ID supports 3-5 kW cooktop and industrial heating applications. The ThinPAK 8x8 package's low parasitic inductance (versus D2PAK) reduces voltage overshoot and EMI, enabling cleaner zero-voltage-switching transitions. Designers should add a small RC snubber across the drain-source to limit peak ringing at the high dV/dt of hard-commutated ZCS-class topologies.
Recommended
Server and Datacom Hot-Swap/ORing
In -48 V server and datacom intermediate bus converter (IBC) or ORing applications, the IPL60R125P7AUMA1's 600 V rating provides ample margin for 400 V bus architectures (e.g., 3-phase PFC output) used in higher-power 48 V direct conversion designs. Its 125 mOhm RDS(on) and Kelvin-source pin support high-frequency ZVS topologies at 100-200 kHz, minimizing switching loss. The integrated Zener-protected gate survives transient ESD events during hot-swap insertion. ThinPAK 8x8's compact 8x8 mm footprint with top-exposed drain suits both top- and bottom-side cooling in dense server PSU designs.
Recommended
Renewable Energy Micro-Inverter PFC
Micro-inverters and small string inverters (typically 600 W to 2 kW) benefit from the IPL60R125P7AUMA1's combination of 600 V VDS, 27 A ID, and 125 mOhm RDS(on) for the PFC boost stage. The 36 nC Qg enables high-frequency switching (100 kHz+) for smaller magnetics, while the integrated gate Zener simplifies the BOM and improves field reliability. ThinPAK 8x8's low-inductance package is well suited to high-density inverter designs where PCB area is at a premium. The CoolMOS P7 platform also provides excellent avalanche ruggedness for grid-side inductive transients during load-step events.
Recommended
Recommended Products Summary
Engineering reference data for IPL60R125P7AUMA1 — comparison, design guidance, and compliance information.
Selection Guide
Comparison with Alternatives
| Parameter | This Product | IPL60R105P7AUMA1 | IPB60R280P7ATMA1 | VBQE165R20S | IPW60R037P7XKSA1 |
|---|---|---|---|---|---|
| Brand | Infineon Technologies | Infineon Technologies | Infineon Technologies | Infineon Technologies | Infineon Technologies |
| Package | ThinPAK 8x8 | ThinPAK 8x8 - same | ThinPAK 8x8 - same | ThinPAK 8x8 - same | ThinPAK 8x8 - same |
| Drain-Source Voltage (VDS) | 600 V | 600 V | 600 V | 650 V | 600 V |
| Continuous Drain Current (ID @ 25C) | 27 A | 30 A | 13 A | 20 A | 100 A |
| RDS(on) max @ 25C | 125 mOhm | 105 mOhm | 280 mOhm | 165 mOhm | 37 mOhm |
| Total Gate Charge (Qg typ) | 36 nC | 42 nC | 21 nC | 60 nC | 120 nC |
| Technology Generation | CoolMOS P7 | CoolMOS P7 | CoolMOS P7 | Superjunction (cross-brand) | CoolMOS P7 |
Key Differentiators
- Lowest RDS(on) and ID combination in ThinPAK 8x8 with 27 A rating (vs IPL60R105P7AUMA1)
- Top-exposed drain tab for double-sided cooling (vs IPB60R280P7ATMA1 (TO-263))
- CoolMOS P7 superjunction lowers switching loss 30-50 percent versus planar 600 V MOSFETs (vs Conventional planar 600 V MOSFETs (e.g. legacy IRF460 series))
Design Notes
Place the gate-driver return (Driver Source, Pin 2) directly to the gate-driver ground via a short, dedicated trace. Use the Power Source pins (3-4) for the high-current return. This Kelvin-source connection is the key advantage of the ThinPAK 8x8 package; failing to separate driver and power source grounds can negate the package's low-inductance benefit and cause voltage overshoot at high dI/dt.
The ThinPAK 8x8 package has its drain exposed on the top tab. For best thermal performance, attach a heatsink or thermal pad to the top tab AND use substantial bottom-side copper. Estimated: with 2 oz copper on both sides (1 sq inch each) and no forced air, theta_JA is around 40-50 C/W, supporting continuous 27 A only with careful derating. Always refer to the Infineon application note for the validated thermal model before finalizing your cooling solution.
Minimize the power-loop inductance by placing input bulk capacitors within 5 mm of the drain and source pads. Use a 4-layer PCB with continuous ground plane under the MOSFET to reduce EMI. The ThinPAK 8x8's exposed drain pad on top must not be used as a primary heatsink surface unless proper isolation is provided - it is electrically connected to drain.
Do not exceed +/-20 V VGS; the IPL60R125P7AUMA1 has an integrated Zener-protected gate but prolonged overvoltage damages it. Use a gate-drive voltage of +10 V to +12 V (not +15 V) for best switching loss/RDS(on) trade-off. Add a 10 kOhm gate-pull-down resistor to prevent inadvertent turn-on during power-up and high dV/dt events.
The superjunction CoolMOS P7 has fast body-diode reverse recovery, which can cause high-frequency ringing on the source lead. Snubber design: start with a small RC snubber (10-22 Ohm + 100-470 pF) across drain-source; tune on the bench with a current probe. Pairing with a properly designed gate-driver (e.g. 2EDN7533RXTMA1) and gate-source resistor of 10-33 Ohm reduces ringing amplitude by 30-50 percent.
Compliance Information
RoHS compliant and lead-free per Infineon product page. Not AEC-Q100 qualified in the AUMA1 variant; for automotive applications, use AEC-Q101-qualified IPL60R125P7AUMA1 equivalents or consult Infineon's automotive-grade portfolio.
