IPL60R180P6AUMA1 vs IPD80R600P7ATMA1 Comparison

Detailed side-by-side comparison of IPL60R180P6AUMA1 by Infineon and IPD80R600P7ATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

Infineon
IPL60R180P6AUMA1

IPL60R180P6AUMA1 - 600V CoolMOS P6 MOSFET 180mΩ | Infineon

IPL60R180P6AUMA1 ✓ Active

Specification Comparison

Parameter IPL60R180P6AUMA1 IPD80R600P7ATMA1
Brand Infineon Infineon
Category MOSFETs MOSFETs
Lifecycle Status Active Active
Stock Status In Stock In Stock
Unit Price (USD) $1.92 $0.92
Technology CoolMOS P6 (Superjunction N-channel MOSFET) CoolMOS P7 super-junction
Drain-Source Voltage (VDS) 600 V 800 V
Gate-Source Voltage (VGS) -20 V to +20 V (max)
Continuous Drain Current (ID) at Tc=25°C 22.4 A
Pulsed Drain Current (IDM) [DATA_NEEDED: IDM] 22 A
Static Drain-Source On-Resistance (RDS(on)) max @ VGS=10V 180 mΩ
Power Dissipation (Ptot) at Tc=25°C 176 W
Operating Junction Temperature Range -55 °C to +150 °C
Storage Temperature Range -55 °C to +150 °C
Thermal Resistance Junction-to-Case (RθJC) [DATA_NEEDED: RθJC value]
Gate Threshold Voltage (VGS(th)) 2.5 V to 3.5 V (typical 3.0 V) 3 V (typical)
Package PG-VSON-4 (Thin-PAK) surface mount PG-TO252-3 (DPAK)
Mounting Type Surface Mount Surface Mount
MSL (Moisture Sensitivity Level) MSL 1 (per JEDEC J-STD-020)
RoHS Status Compliant
Lead-Free Yes
Continuous Drain Current (ID, Tc) 8 A
On-Resistance (RDS(on), max) 600 mΩ at VGS=10V
Maximum Power Dissipation (Ptot) 60 W (Tc)
Maximum Gate-Source Voltage (VGS) ±30 V
Avalanche Energy, Single Pulse (EAS) 20 mJ
Avalanche Energy, Repetitive (EAR) 0.17 mJ
Operating Temperature Range -55 C to +150 C
Polarity N-Channel
MSL Level 1 (per JEDEC J-STD-020)

Datasheets & Resources

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