IPL60R180P6AUMA1 vs IPD80R600P7ATMA1 比較
詳細並排比較 IPL60R180P6AUMA1 由 Infineon 與 IPD80R600P7ATMA1 由 Infineon. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況，以找出最符合您設計需求的元件。
規格比較
| 參數 | IPL60R180P6AUMA1 | IPD80R600P7ATMA1 |
|---|---|---|
| 品牌 | Infineon | Infineon |
| 類別 | MOSFETs | MOSFETs |
| 生命週期狀態 | 啟用中 | 啟用中 |
| Technology | CoolMOS P6 (Superjunction N-channel MOSFET) | CoolMOS P7 super-junction |
| Drain-Source Voltage (VDS) | 600 V | 800 V |
| Gate-Source Voltage (VGS) | -20 V to +20 V (max) | — |
| Continuous Drain Current (ID) at Tc=25°C | 22.4 A | — |
| Pulsed Drain Current (IDM) | [DATA_NEEDED: IDM] | 22 A |
| Static Drain-Source On-Resistance (RDS(on)) max @ VGS=10V | 180 mΩ | — |
| Power Dissipation (Ptot) at Tc=25°C | 176 W | — |
| 工作接面溫度範圍 | -55 °C to +150 °C | — |
| Storage Temperature Range | -55 °C to +150 °C | — |
| Thermal Resistance Junction-to-Case (RθJC) | [DATA_NEEDED: RθJC value] | — |
| Gate Threshold Voltage (VGS(th)) | 2.5 V to 3.5 V (typical 3.0 V) | 3 V (typical) |
| 封裝 | PG-VSON-4 (Thin-PAK) surface mount | PG-TO252-3 (DPAK) |
| 安裝類型 | Surface Mount | Surface Mount |
| MSL (Moisture Sensitivity Level) | MSL 1 (per JEDEC J-STD-020) | — |
| RoHS 狀態 | Compliant | — |
| Lead-Free | Yes | — |
| Continuous Drain Current (ID, Tc) | — | 8 A |
| On-Resistance (RDS(on), max) | — | 600 mΩ at VGS=10V |
| Maximum Power Dissipation (Ptot) | — | 60 W (Tc) |
| Maximum Gate-Source Voltage (VGS) | — | ±30 V |
| Avalanche Energy, Single Pulse (EAS) | — | 20 mJ |
| Avalanche Energy, Repetitive (EAR) | — | 0.17 mJ |
| 工作溫度範圍 | — | -55 C to +150 C |
| Polarity | — | N-Channel |
| MSL 等級 | — | 1 (per JEDEC J-STD-020) |