IPL60R180P6AUMA1 vs IPD80R600P7ATMA1 Perbandingan

Perbandingan bersamaan detil IPL60R180P6AUMA1 dari Infineon dan IPD80R600P7ATMA1 dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.

Perbandingan Spesifikasi

Parameter Umum IPL60R180P6AUMA1 IPD80R600P7ATMA1
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
Technology CoolMOS P6 (Superjunction N-channel MOSFET) CoolMOS P7 super-junction
Drain-Source Voltage (VDS) 600 V 800 V
Gate-Source Voltage (VGS) -20 V to +20 V (max) —
Continuous Drain Current (ID) at Tc=25°C 22.4 A —
Pulsed Drain Current (IDM) [DATA_NEEDED: IDM] 22 A
Static Drain-Source On-Resistance (RDS(on)) max @ VGS=10V 180 mΩ —
Power Dissipation (Ptot) at Tc=25°C 176 W —
Rentang Suhu Hubung Kerja -55 °C to +150 °C —
Storage Temperature Range -55 °C to +150 °C —
Thermal Resistance Junction-to-Case (RθJC) [DATA_NEEDED: RθJC value] —
Gate Threshold Voltage (VGS(th)) 2.5 V to 3.5 V (typical 3.0 V) 3 V (typical)
Paket PG-VSON-4 (Thin-PAK) surface mount PG-TO252-3 (DPAK)
Tipe Mounting Surface Mount Surface Mount
MSL (Moisture Sensitivity Level) MSL 1 (per JEDEC J-STD-020) —
Status RoHS Compliant —
Lead-Free Yes —
Continuous Drain Current (ID, Tc) — 8 A
On-Resistance (RDS(on), max) — 600 mΩ at VGS=10V
Maximum Power Dissipation (Ptot) — 60 W (Tc)
Maximum Gate-Source Voltage (VGS) — ±30 V
Avalanche Energy, Single Pulse (EAS) — 20 mJ
Avalanche Energy, Repetitive (EAR) — 0.17 mJ
Rentang Suhu Kerja — -55 C to +150 C
Polarity — N-Channel
Level MSL — 1 (per JEDEC J-STD-020)

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