IPL65R130C7AUMA1 - 650V 15A 130mΩ CoolMOS C7 N-MOSFET | Infineon
MPN: IPL65R130C7AUMA1 ✓ Active| Qty | Unit Price | Extended |
|---|---|---|
| 1 | $4.83 | $4.83 |
| 10 | $4.35 | $43.50 |
| 100 | $3.78 | $378.00 |
| 500 | $3.22 | $1,610.00 |
| 1,000 | $2.79 | $2,790.00 |
IPL65R130C7AUMA1 Overview
What is a CoolMOS C7 superjunction MOSFET? A superjunction MOSFET is a power transistor that uses a vertical alternating p-n column structure instead of the conventional planar or trench DMOS cell, dramatically lowering R DS(on) per unit silicon area. The C7 generation specifically targets hard- and soft-switching topologies in the 500V-950V class. Within the broader component hierarchy, a power MOSFET belongs to discrete semiconductors -> transistors -> MOSFETs, and it is the fundamental switching element in switch-mode power supplies (SMPS), power factor correction (PFC) stages, and motor drives.
Key specifications include a continuous drain current of 15 A at 25°C case temperature, 102 W power dissipation, 650 V drain-source breakdown voltage, and an integrated body diode for inductive switching. The PG-VSON-4 package provides an exposed metal pad for top-side cooling and a typical thermal resistance of approximately 1.0 K/W junction-to-case. The MOSFET is rated for -40°C to +150°C junction temperature and is RoHS compliant with lead-free reflow profiles.
Technically, the CoolMOS C7 architecture employs charge-compensated p-n columns that decouple the classical R DS(on) × BV trade-off, yielding 5-10× lower specific on-resistance than planar MOSFETs of the same voltage class. The technology minimizes output capacitance (C oss) and gate charge (Q G), which directly reduces switching energy losses (E on / E off) at high frequencies - critical for LLC resonant converters and totem-pole PFC stages where every milliohm counts. The C7 series is widely used as an upgrade path from older C3/C6 generations.
Typical applications include server and telecom switched-mode power supplies (SMPS), power factor correction (PFC) front-end stages, industrial welding equipment, solar inverters, and high-frequency LLC resonant converters. The combination of 650V rating and 15A continuous current makes it suitable for 3-5 kW power conversion stages commonly found in server PSU 80 PLUS Titanium designs and industrial motor drives.
When designing with this part, pay attention to gate driving - a 12V VGS with low-impedance gate drive (1-5Ω) is recommended to fully enhance the channel and minimize switching losses. PCB layout should minimize the power-loop and gate-loop inductance to suppress ringing; use Kelvin source connection if available in the chosen footprint variant.
This page synthesizes distributor pricing, drop-in alternatives, and practical design notes not found in the manufacturer datasheet.
Drop-in alternatives for IPL65R130C7AUMA1 — same package, pin-to-pin compatible. Different-package parts requiring PCB rework are excluded.
Variants in this series
Same-series models that are drop-in compatible with IPL65R130C7AUMA1 (same form factor and footprint) — differing in MSL Level, Operating Temperature Range, Package, Technology.
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View Datasheet →IPL65R130C7AUMA1 Maximum Ratings & Electrical Characteristics
| Manufacturer | Infineon Technologies |
| Series | CoolMOS C7 |
| Technology | Superjunction (SJ) N-channel MOSFET |
| Drain-Source Voltage (V DS) | 650 V |
| Continuous Drain Current (I D, Tc=25°C) | 15 A |
| On-Resistance R DS(on) max | 130 mΩ |
| Power Dissipation (P D) | 102 W |
| Package | PG-VSON-4 |
| Mounting Type | Surface Mount |
| Operating Temperature Range | -40°C to +150°C (Tj) |
| RoHS Status | Compliant |
| MSL Level | MSL 1 |
IPL65R130C7AUMA1 Pin Configuration
| Pin 1 | Gate (G) — Gate drive input, 0-12V typical enhancement voltage |
| Pin 2 | Drain (D) — Drain terminal connected to high-voltage load |
| Pin 3 | Source (S) — Source terminal, connect to gate drive return |
| Pin 4 | Drain (D) — Drain terminal (parallel to pin 2 and exposed pad for low R DS(on)) |
| Pin PAD | Exposed Pad (Drain) — Bottom exposed thermal pad, electrically tied to Drain for cooling |
Safe Operating Area (DC)
Typical Applications
IPL65R130C7AUMA1 is suitable for 7 applications: Switch-Mode Power Supply (SMPS) Primary Switch, Power Factor Correction (PFC) Boost Stage, LLC Resonant Converter, Solar Microinverter, Industrial Welding Equipment, Server / Datacenter 80 PLUS Titanium PSU, EV Onboard Charger (OBC).
Switch-Mode Power Supply (SMPS) Primary Switch
The IPL65R130C7AUMA1 serves as the primary-side switching element in 3-5 kW SMPS designs, including server and telecom 80 PLUS Titanium PSUs. Its 650V drain-source rating comfortably handles rectified 230V AC bus voltages with derating margin, while the 130 mΩ on-resistance minimizes conduction loss in continuous conduction mode. The CoolMOS C7 architecture reduces E on/E off switching losses by ~30% versus the previous C3 generation, enabling higher switching frequencies (65-100 kHz) for smaller magnetics. Designers pair it with SiC diodes or synchronous rectification on the secondary side to maximize efficiency.
Recommended
Power Factor Correction (PFC) Boost Stage
In continuous-conduction-mode (CCM) PFC front-end stages, the IPL65R130C7AUMA1 provides fast switching at frequencies up to 100 kHz with low reverse-recovery charge from its integrated body diode. The 15A continuous rating supports 1.5-3 kW PFC stages common in industrial UPS and solar inverter applications. Its 650V breakdown withstands 385V DC bus transients from AC line surges, and the small VSON-4 footprint enables compact interleaved PFC designs where two or four MOSFETs fit on a single heatsink assembly.
Recommended
LLC Resonant Converter
The IPL65R130C7AUMA1 operates as the half-bridge primary switch in LLC resonant converters for server and EV onboard-charger applications. CoolMOS C7's low output capacitance (C oss) and gate charge (Q G) translate directly to reduced circulating current losses and higher resonant tank Q factor, enabling >96% peak efficiency at full load. The 650V rating suits 400V DC-link EV systems, while the PG-VSON-4 footprint supports the planar magnetic assemblies preferred in modern 1U server form factors.
Recommended
Solar Microinverter
For 600-1000V DC-input microinverters converting photovoltaic panel output to AC grid power, the IPL65R130C7AUMA1 handles the high-voltage boost and full-bridge inverter stages. Its low R DS(on) reduces conduction losses during peak sun hours, and the 102W power dissipation rating supports continuous operation at elevated temperatures inside outdoor IP67 enclosures. The PG-VSON-4 surface-mount package is critical for the small-form-factor designs demanded by microinverter installations on residential rooftops where PCB real estate is at a premium.
Recommended
Industrial Welding Equipment
Inverter-based welding machines (MIG, TIG, MMA) operating at 20-50 kHz switching frequencies use the IPL65R130C7AUMA1 in the primary full-bridge or half-bridge inverter stage. Its 650V V DS rating supports rectified 380V three-phase industrial mains, and its 15A continuous rating handles the high peak currents demanded by stick welding arcs. The robust 102W power dissipation combined with the low thermal resistance of the PG-VSON-4 package allows designers to use a small heatsink or even chassis-mounted cooling in portable welding equipment.
Recommended
Server / Datacenter 80 PLUS Titanium PSU
Tier-IV datacenters require PSUs exceeding 96% efficiency to meet 80 PLUS Titanium standards, and the IPL65R130C7AUMA1 enables this in the totem-pole PFC and LLC primary stages. The CoolMOS C7 technology reduces switching loss by approximately 50% versus older silicon MOSFETs, allowing passive cooling at higher output wattages (2-3 kW per PSU). Its PG-VSON-4 package is preferred over TO-220 for high-density 1U server PSU form factors where component height is constrained to 25-30 mm.
Recommended
EV Onboard Charger (OBC)
In 3.3 kW to 11 kW onboard EV chargers using the 400V or 800V battery architectures, the IPL65R130C7AUMA1 typically operates in the PFC boost and LLC primary stages. Its 650V rating is appropriate for 400V systems but requires careful derating for 800V battery systems. The low switching losses support the 100-150 kHz operating frequencies needed to meet automotive size, weight, and cost targets. AEC-Q101 qualification is not standard on this part, so automotive designs must select an equivalent automotive-qualified variant or add qualification testing.
Recommended
Recommended Products Summary
Engineering reference data for IPL65R130C7AUMA1 — comparison, design guidance, and compliance information.
Selection Guide
Comparison with Alternatives
| Parameter | This Product | IPL65R130C7 | IPI65R130C7 | ISZ078N10LM6ATMA1 | ISC011N04NM7VATMA1 |
|---|---|---|---|---|---|
| Package | PG-VSON-4 (5x6 mm) | PG-VSON-4 - same | PG-VSON-4 - same | PG-VSON-4 - same | PG-VSON-4 - same |
| Brand | Infineon | Infineon - same | Infineon - same | Infineon - same | Infineon - same |
| Drain-Source Voltage (V DS) | 650 V | 650 V - same | 650 V - same | 100 V - lower (-85%) | 40 V - much lower (-94%) |
| On-Resistance R DS(on) max | 130 mΩ | 130 mΩ - same | 130 mΩ - same | 0.78 mΩ - much lower (-99%) | 1.1 mΩ - much lower (-99%) |
| Technology | CoolMOS C7 Superjunction | CoolMOS C7 Superjunction - same | CoolMOS C7 Superjunction - same | OptiMOS 6 - newer gen | OptiMOS 7 - newer gen |
| Operating Temperature Range | -40°C to +150°C | -40°C to +150°C - same | -40°C to +150°C - same | -40°C to +150°C - same | -40°C to +150°C - same |
| AEC-Q101 Automotive Qualified | No (industrial grade) | No - same | No - same | Yes - automotive grade | Yes - automotive grade |
Key Differentiators
- Compact surface-mount PG-VSON-4 footprint for ultra-dense designs (vs IPP65R130C7 (TO-220 package))
- CoolMOS C7 superjunction technology with best-in-class R DS(on)/package (vs Older IPL60R130C6 (CoolMOS C6 family))
- Industrial-grade qualification with 102W power dissipation (vs Generic 650V planar MOSFETs)
Design Notes
Estimated: At V DS=400V bus, I D=10A continuous, conduction loss is approximately I²×R = 10²×0.13 = 13W. Switching losses depend on frequency - at 100kHz with E on+E off ≈ 200 µJ (typical for C7 family), add 20W. Total P D ≈ 33W with 2× margin. The PG-VSON-4 package has typical θJC ≈ 1.0 K/W, so junction temperature rise above case is roughly 33K at this load - well within the 150°C Tj limit. For continuous 15A at 25°C case, ensure the heatsink keeps Tc below 110°C to maintain Tj below 150°C.
Minimize the power-loop inductance between the MOSFET drain, the bus capacitor, and the rectifier - this loop carries the full di/dt at turn-off and overshoot can exceed the 650V rating if inductance exceeds 50nH. Use a 4-layer PCB with the bottom layer as a continuous ground/drain plane directly under the VSON-4 package. The exposed pad must be soldered to a copper pad of at least 100mm² on the top layer with thermal vias (0.3mm pitch, 0.6mm diameter, plugged on bottom) to the inner copper planes for thermal relief.
Use a Kelvin source connection if the VSON-4 footprint variant supports it - routing the gate drive return to the Source sense pin (not the power source) eliminates the source inductance voltage spike at turn-off and dramatically reduces ringing. Place the gate drive resistors (Rgon/Rgoff typically 5-20Ω) within 5mm of the gate pin. Use a wide, short gate trace (≥0.5mm) to avoid gate-loop inductance that causes spurious turn-on in half-bridge configurations. For half-bridge, place bootstrap diode and capacitor within 3mm of the high-side drain and source pins.
CoolMOS C7 family MOSFETs have fast switching transitions (dv/dt up to 50kV/µs) which can cause EMI issues above CISPR 22 Class B limits if not mitigated. Add an RC snubber (10Ω + 1nF) across the MOSFET drain-source for hard-switching topologies, and ensure the input EMI filter meets EN 55011 / CISPR 11 industrial limits. Common-mode chokes on the AC input are essential to attenuate the high-frequency switching noise that couples through the MOSFET's junction capacitance to earth ground.
Never operate the IPL65R130C7AUMA1 below its 650V maximum rating without adequate derating - design for V DS peak ≤ 520V (80% derating) to handle inductive spikes from the LLC leakage inductance or PFC boost inductor. Use a TVS diode (e.g., 600V bidirectional) across the drain-source if the application has hard switching into an inductive load. Also avoid paralleling multiple units without proper gate-source balancing resistors (typically 10-100Ω in series with each gate) - the C7 family's fast switching makes parallel operation prone to oscillation without balancing.
Compliance Information
RoHS and REACH compliant per Infineon product page. Industrial grade - AEC-Q100/Q101 automotive qualification NOT applicable to this part number. Pb-free reflow profiles only (MSL 1).
