IPL65R200CFD7AUMA1 vs IPB60R040CFD7ATMA1 Comparison

Detailed side-by-side comparison of IPL65R200CFD7AUMA1 by Infineon and IPB60R040CFD7ATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

Infineon
IPL65R200CFD7AUMA1

IPL65R200CFD7AUMA1 - 650V 14A CoolMOS CFD7 MOSFET | Infineon

IPL65R200CFD7AUMA1 βœ“ Active

Specification Comparison

Parameter IPL65R200CFD7AUMA1 IPB60R040CFD7ATMA1
Brand Infineon Infineon
Category MOSFETs MOSFETs
Lifecycle Status Active Active
Stock Status In Stock In Stock
Unit Price (USD) $1.52 $5.19
Manufacturer Infineon Technologies Infineon Technologies
Series CoolMOS CFD7 β€”
FET Type N-Channel β€”
Drain-Source Voltage (VDS) 650 V 600 V
Continuous Drain Current (ID, Tc) 14 A β€”
Power Dissipation (PD, Tc) 81 W β€”
On-Resistance (RDS(on)) 0.2 ohm at VGS=10V, ID=5.2A β€”
Gate Threshold Voltage (VGS(th)) 3.5 V β€”
Technology CoolMOS Superjunction (SJ) Superjunction (SJ) N-Channel MOSFET
Package PG-VSON-4 PG-TO263-3-2 (D2PAK)
Mounting Type Surface Mount Surface Mount
Operating Temperature -55C to +150C (TJ) β€”
Gate Charge (Qg) [DATA_NEEDED: typical Qg value] β€”
Body Diode Fast-recovery intrinsic β€”
Gate-Source ESD Protection Yes (integrated) β€”
RoHS Status Compliant Compliant
Product Family β€” CoolMOS CFD7
Continuous Drain Current (ID, Tc=25Β°C) β€” 50 A
Pulsed Drain Current (IDM) β€” [DATA_NEEDED: pulsed drain current]
On-Resistance RDS(on) max @ VGS=10V β€” 40 mΞ©
Gate Threshold Voltage VGS(th) typ β€” 4 V
Total Gate Charge Qg typ β€” [DATA_NEEDED: Qg]
Power Dissipation (Tc=25Β°C) β€” 227 W
Operating Temperature Range β€” -55Β°C to +150Β°C
Integrated Body Diode β€” Yes - ultra-fast CoolMOS CFD7 diode
MSL Level β€” 1
Lead-Free β€” Yes
Target Applications β€” Soft-switching topologies (ZVS phase-shift full-bridge, LLC)

Datasheets & Resources

Browse All Products Create BOM Request Quote