IPP037N08N3GXKSA1 vs IPP045N10N3GXKSA1 Pengandingan

Pengandingan Sisi Kiri Sisi Kanan Terperinci IPP037N08N3GXKSA1 disebabkan oleh Infineon dan IPP045N10N3GXKSA1 disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.

Pengandingan Spesifikasi

Parametr IPP037N08N3GXKSA1 IPP045N10N3GXKSA1
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
FET Type N-Channel —
Technology MOSFET (Metal Oxide) - OptiMOS™ 3 OptiMOS 3
Drain to Source Voltage (Vdss) 80 V —
Continuous Drain Current (Id) @ Tc=25°C 100 A —
RDS(on) Max @ VGS=10V 3.75 mΩ —
Drive Voltage (Max RDS(on), Min RDS(on)) 6 V, 10 V —
Power Dissipation (Pd) @ Tc=25°C 214 W —
Kemasan PG-TO220-3 (Through Hole) TO-220-3 (PG-TO220-3) through-hole
Jenis Pemasangan Through Hole Through Hole
Kiraan Pin 3 —
Gambaran Suhu Operasi -55°C to +175°C (junction) -55 °C to +175 °C (junction, typical MOSFET limit)
Gate Threshold Voltage (Vgs(th)) [DATA_NEEDED: Vgs(th) typ/min/max] —
Total Gate Charge (Qg) [DATA_NEEDED: Qg typ @ VGS=10V] —
Avalanche Energy Rating (EAS) [DATA_NEEDED: EAS] —
Status RoHS Compliant Compliant (per LCSC datasheet excerpt)
Manufacturer — Infineon Technologies
Part Number — IPP045N10N3GXKSA1
Jenis Transistor — N-Channel MOSFET
Drain-Source Voltage (V<sub>DS</sub>) — 100 V
Continuous Drain Current (I<sub>D</sub>) at T<sub>C</sub>=25°C — 100 A
Continuous Drain Current (I<sub>D</sub>) at T<sub>C</sub>=100°C — [DATA_NEEDED: I_D at TC=100C]
Pulsed Drain Current (I<sub>D,pulse</sub>) — 137 A
On-Resistance R<sub>DS(on)</sub> max at V<sub>GS</sub>=10V — 4.5 mΩ
Gate Threshold Voltage V<sub>GS(th)</sub> — 3.5 V (typical, per LCSC listing)
Power Dissipation P<sub>D</sub> at T<sub>C</sub>=25°C — 214 W
Lead-Free — Yes (Infineon G/GX part suffix)
Aras MSL — N/A (through-hole package)

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