IPP037N08N3GXKSA1 vs IPP045N10N3GXKSA1 Perbandingan

Perbandingan bersamaan detil IPP037N08N3GXKSA1 dari Infineon dan IPP045N10N3GXKSA1 dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.

Perbandingan Spesifikasi

Parameter Umum IPP037N08N3GXKSA1 IPP045N10N3GXKSA1
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
FET Type N-Channel —
Technology MOSFET (Metal Oxide) - OptiMOS™ 3 OptiMOS 3
Drain to Source Voltage (Vdss) 80 V —
Continuous Drain Current (Id) @ Tc=25°C 100 A —
RDS(on) Max @ VGS=10V 3.75 mΩ —
Drive Voltage (Max RDS(on), Min RDS(on)) 6 V, 10 V —
Power Dissipation (Pd) @ Tc=25°C 214 W —
Paket PG-TO220-3 (Through Hole) TO-220-3 (PG-TO220-3) through-hole
Tipe Mounting Through Hole Through Hole
Jumlah Pin 3 —
Rentang Suhu Kerja -55°C to +175°C (junction) -55 °C to +175 °C (junction, typical MOSFET limit)
Gate Threshold Voltage (Vgs(th)) [DATA_NEEDED: Vgs(th) typ/min/max] —
Total Gate Charge (Qg) [DATA_NEEDED: Qg typ @ VGS=10V] —
Avalanche Energy Rating (EAS) [DATA_NEEDED: EAS] —
Status RoHS Compliant Compliant (per LCSC datasheet excerpt)
Manufacturer — Infineon Technologies
Part Number — IPP045N10N3GXKSA1
Tipe Transistor — N-Channel MOSFET
Drain-Source Voltage (V<sub>DS</sub>) — 100 V
Continuous Drain Current (I<sub>D</sub>) at T<sub>C</sub>=25°C — 100 A
Continuous Drain Current (I<sub>D</sub>) at T<sub>C</sub>=100°C — [DATA_NEEDED: I_D at TC=100C]
Pulsed Drain Current (I<sub>D,pulse</sub>) — 137 A
On-Resistance R<sub>DS(on)</sub> max at V<sub>GS</sub>=10V — 4.5 mΩ
Gate Threshold Voltage V<sub>GS(th)</sub> — 3.5 V (typical, per LCSC listing)
Power Dissipation P<sub>D</sub> at T<sub>C</sub>=25°C — 214 W
Lead-Free — Yes (Infineon G/GX part suffix)
Level MSL — N/A (through-hole package)

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