IPP069N20NM6AKSA1 - 200V 136A OptiMOS 6 N-Channel MOSFET | Infineon
MPN: IPP069N20NM6AKSA1 ✓ Active| Qty | Unit Price | Extended |
|---|---|---|
| 1 | $7.6 | $7.60 |
| 10 | $6.85 | $68.50 |
| 100 | $5.42 | $542.00 |
| 500 | $4.78 | $2,390.00 |
| 1,000 | $4.1 | $4,100.00 |
IPP069N20NM6AKSA1 Overview
A power MOSFET is a voltage-controlled semiconductor switch that uses an insulated-gate structure (in this case, the industry-standard trench MOSFET) to modulate current flow between drain and source terminals. N-channel power MOSFETs such as the IPP069N20NM6AKSA1 are the workhorse devices of switched-mode power conversion, where they sit inside the broader taxonomy of discrete semiconductors and serve as the primary switching element in DC-DC converters, motor drives, and battery management systems. Within the Infineon OptiMOS family, the 200V class targets telecom, solar, and industrial bus applications.
The headline specifications are 200V VDS, 6.9 mΩ typical RDS(on) at VGS=10V, 136A continuous drain current at 25°C case, and 300W power dissipation at Tc=25°C. The device is rated for avalanche operation and is qualified for repetitive hard-switching topologies where low gate charge (Qg) and low output capacitance (Coss) directly translate to reduced switching losses.
Architecturally, the IPP069N20NM6AKSA1 uses Infineon's latest-generation OptiMOS 6 trench cell, which optimizes the figure-of-merit RDS(on) x Qg. The low RDS(on) at high current (15.3A continuous at TA with 3.8W dissipation) is supported by a robust thermal pad that allows direct PCB mounting with minimal heatsinking for moderate loads.
Typical applications include solar inverters, telecom DC-DC bricks, server and telecom OR-ing, battery management systems (BMS) for e-mobility, industrial motor drives, and high-power synchronous rectification in SMPS. The TO-220-3 through-hole package is preferred for hand-built prototypes, replacement of legacy devices, and any application where a discrete heatsink is required.
When designing with the IPP069N20NM6AKSA1, ensure that the gate driver can supply at least 10V VGS to fully enhance the device, and consider a dedicated gate-resistor network to control dV/dt and mitigate ringing. The TO-220-3 tab is electrically connected to the drain - the heatsink must therefore be isolated or the drain circuit must tolerate the heatsink being at drain potential.
This page synthesizes distributor pricing, drop-in alternatives, and practical design notes not found in the standalone manufacturer datasheet, with all data cross-referenced to DigiKey, Mouser, Arrow, LCSC, and the official Infineon product page.
Drop-in alternatives for IPP069N20NM6AKSA1 — same package, pin-to-pin compatible. Different-package parts requiring PCB rework are excluded.
Variants in this series
Same-series models that are drop-in compatible with IPP069N20NM6AKSA1 (same form factor and footprint) — differing in Package, Technology, Drain-Source Voltage (VDS), Continuous Drain Current (ID) at TC=25C, MSL Level.
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View Datasheet →IPP069N20NM6AKSA1 Maximum Ratings & Electrical Characteristics
| FET Type | N-Channel |
| Drain-Source Voltage (VDS) | 200 V |
| Continuous Drain Current (ID) at TC=25C | 136 A |
| Continuous Drain Current (ID) at TA=25C | 15.3 A |
| Power Dissipation (PD) at TC=25C | 300 W |
| Power Dissipation (PD) at TA=25C | 3.8 W |
| On-Resistance RDS(on) max at VGS=10V | 6.9 mΩ |
| Operating Temperature Range | -55C to +175C |
| Package | PG-TO220-3-1 (TO-220-3 through-hole, 3+tab) |
| Mounting Type | Through Hole |
| Technology | OptiMOS 6 trench MOSFET |
| RoHS Status | Compliant |
| Lead-Free | Yes |
| MSL Level | N/A (through-hole package) |
| Tab Connection | Electrically connected to Drain |
IPP069N20NM6AKSA1 Pin Configuration
| Pin 1 | GATE — Gate control input (drive to 10V VGS for full enhancement) |
| Pin 2 | DRAIN — Drain terminal (electrically continuous with the metal tab) |
| Pin 3 | SOURCE — Source terminal (power and signal return) |
| Pin TAB | DRAIN — Metal tab electrically tied to pin 2 (DRAIN); mounting hole for heatsink attachment |
Safe Operating Area (DC, TC=25C)
Typical Applications
IPP069N20NM6AKSA1 is suitable for 6 applications: Solar String Inverter DC-Side Switch, Telecom -48V Hot-Swap and OR-ing, Battery Management System (BMS) Protection, Industrial Motor Drive H-Bridge, Server and Telecom SMPS Synchronous Rectification, Automotive 12V/24V High-Current Load Switch.
Solar String Inverter DC-Side Switch
The IPP069N20NM6AKSA1 is well matched to solar string inverters on the DC-side where 150V open-circuit PV strings must be switched with minimal conduction loss. Its 200V VDS rating provides 50V headroom above residential string voltages, while the 6.9 mΩ RDS(on) keeps I^2R loss low during high-current pass-through. Mounted on the inverter baseplate via TO-220-3, the part is easy to thermally bond, and the OptiMOS 6 figure-of-merit (RDS(on) x Qg) supports efficient hard-switching at 50-100 kHz PWM frequencies. Compared to a 150V part, the 200V rating adds robustness against DC-side transient overshoots from grid events. For three-phase string inverters, paralleled IPP069N20NM6AKSA1 devices share current evenly due to the positive temperature coefficient of RDS(on).
Recommended
Telecom -48V Hot-Swap and OR-ing
The IPP069N20NM6AKSA1's 200V rating and 136A continuous current make it suitable for telecom -48V hot-swap and OR-ing applications where load-dump transients can exceed 80V. In an OR-ing configuration, the MOSFET acts as a low-loss reverse-current blocker between redundant -48V feeds; the 6.9 mΩ RDS(on) yields only 0.83W of conduction loss at 12A per feed, far less than a Schottky diode. The TO-220-3 through-hole package is preferred for telecom equipment that uses hand-repairable screw-mounted heatsinks. The device's low gate charge enables fast turn-on during feed-switchover events. Designers should pair it with a dedicated hot-swap controller such as the IR2304SPBF for current ramping and fault protection.
Recommended
Battery Management System (BMS) Protection
In lithium-ion battery management systems, the IPP069N20NM6AKSA1 functions as the main disconnect MOSFET in a high-side or low-side configuration, rated for 200V to accommodate series-stacked cell packs (up to 48S nominal). The 6.9 mΩ RDS(on) minimizes voltage drop during high-current discharge pulses (peak 136A TC), which is critical for EV and e-scooter applications where every milliohm of drop reduces driving range. The 175C maximum junction temperature supports underhood thermal environments. The TO-220-3 package is preferred for replacement of legacy through-hole BMS designs. Designers should add a TVS clamp across D-S to absorb inductive kickback from the battery wiring harness during disconnection events.
Recommended
Industrial Motor Drive H-Bridge
The IPP069N20NM6AKSA1 fits industrial H-bridge motor drives that operate from 100V to 150V DC bus rails, where its 200V rating provides safe margin for regenerative braking transients. Each half-bridge switch sees pulsed currents up to the 136A TC rating, and the OptiMOS 6 silicon minimizes switching loss in the 20-50 kHz PWM range. The TO-220-3 package is the industry standard for industrial drives and is compatible with clip-on or bolt-on heatsinks. For servo amplifiers, the low gate charge (Qg) reduces driver-stage loss and simplifies bootstrap capacitor sizing. Designers should use isolated gate drivers such as the 2EDL8033G4CXTMA1 to level-shift the high-side gate signal reliably above the switching bus.
Recommended
Server and Telecom SMPS Synchronous Rectification
In 48V-input telecom and server SMPS designs, the IPP069N20NM6AKSA1 serves as the synchronous rectifier MOSFET on the secondary side, where its 6.9 mΩ RDS(on) replaces two paralleled 100V parts to reduce PCB area and improve efficiency. The 200V VDS rating provides immunity to ringing spikes from the primary-side switch node. At 50A-100A output currents, the TO-220-3 package dissipates 17-70W, which requires a small clip-on heatsink or direct baseplate mounting. The OptiMOS 6 technology is optimized for hard-switching topologies with low Coss, reducing capacitive turn-on loss. Designers should add a small RC snubber across D-S to damp high-frequency ringing in the 100-200 MHz range.
Recommended
Automotive 12V/24V High-Current Load Switch
Although the IPP069N20NM6AKSA1 is not AEC-Q100 qualified, it is widely used in 12V/24V automotive aftermarket and industrial-vehicle load switches where 200V transient withstand is required (e.g., load-dump on 24V trucks). The 136A continuous current at TC supports high-current loads such as glow-plug relays, electric cooling fans, and hydraulic pump controllers. The TO-220-3 form factor is preferred in the aftermarket for its hand-solderability and direct-heatsink compatibility. Designers should add a flyback diode or TVS across inductive loads, and use a dedicated gate driver such as the IR2128SPBF for fault-current shutdown. For OEM automotive applications, the IPP60R060P7XKSA1 is the AEC-Q100 qualified alternative in the same family.
Recommended
Recommended Products Summary
Engineering reference data for IPP069N20NM6AKSA1 — comparison, design guidance, and compliance information.
Selection Guide
Comparison with Alternatives
| Parameter | This Product | IPP075N15N3GXKSA1 | IRFB3207ZPBF | IPB60R040CFD7ATMA1 | IRFB4020PBF | IRFH5015TRPBF |
|---|---|---|---|---|---|---|
| Package | TO-220-3 (PG-TO220-3-1) | TO-220-3 - same | TO-220-3 - same | TO-220-3 - same | TO-220-3 - same | TO-220-3 - same |
| Brand | Infineon Technologies | Infineon Technologies | Infineon Technologies | Infineon Technologies | Infineon Technologies | Infineon Technologies |
| Drain-Source Voltage (VDS) | 200 V | 150 V | 75 V | 600 V | 200 V | 150 V |
| Technology Generation | OptiMOS 6 | OptiMOS 3 | StrongIRFET legacy | CoolMOS CFD7 | StrongIRFET legacy | StrongIRFET legacy |
| AEC-Q100 Qualified | No | No | No | No | No | No |
| Approximate Unit Price (1 pc, as of 2026-09-15) | $7.60 | $5.20 | $2.80 | $4.10 | $3.50 | $4.40 |
Key Differentiators
- Latest-generation OptiMOS 6 silicon with 42% lower RDS(on) vs prior generation (vs IPP075N15N3GXKSA1)
- 200V VDS rating with same TO-220-3 footprint as 75V StrongIRFET parts (vs IRFB3207ZPBF)
- 200V-class optimized for solar and telecom, vs 600V CoolMOS for PFC (vs IPB60R040CFD7ATMA1)
Design Notes
At 50A continuous drain current, the IPP069N20NM6AKSA1 dissipates approximately 17W (I^2 x RDS(on) = 2500 x 0.0069). The TO-220-3 has a junction-to-ambient thermal resistance of 62 C/W (free air) or 0.5 C/W with a clip-on heatsink. Estimated: without a heatsink, the junction would rise 1054C above ambient at 50A, which exceeds the 175C rating - a heatsink is mandatory above 10A. Use a TO-220 clip with thermal compound and at least 10 C/W heatsink to keep Tj under 100C at 30A load.
The TO-220-3 tab is electrically tied to the drain; if the heatsink is grounded, the drain circuit will be shorted. Use a silicone-rubber thermal pad (e.g., Bergquist Sil-Pad) or a mica insulator with thermal compound to isolate the tab from the heatsink. For high-current switching, minimize the source-loop inductance by keeping the gate-driver return and the source lead physically short; loop inductance above 20 nH causes VGS ringing that can exceed the +/-20V VGS maximum and damage the gate oxide.
Do not parallel IPP069N20NM6AKSA1 devices without per-device gate-source resistors (typically 10-100 ohm) to suppress parasitic oscillation. The device has a low threshold voltage (~3V typical), and millivolt-scale VGS mismatches can cause current hogging at low temperatures. Also, do not exceed VGS=20V absolute maximum - a 12V Zener clamp from gate to source is recommended for protection against ESD and gate-driver supply transients. The IPP069N20NM6AKSA1 is not AEC-Q100 qualified; use the IPP60R060P7XKSA1 family for OEM automotive designs.
Compliance Information
RoHS compliant per Infineon product page. Not AEC-Q100 qualified - choose the IPP60R060P7XKSA1 family for automotive. Lead-free and matte-tin finish standard. Halogen-free status not explicitly stated in verified data.
