IPP120N08S403AKSA1 vs BSC190N15NS3GATMA1 Comparison
Detailed side-by-side comparison of IPP120N08S403AKSA1 by Infineon and BSC190N15NS3GATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Infineon
BSC190N15NS3GATMA1
BSC190N15NS3GATMA1 - 150V 50A N-Channel OptiMOS 3 MOSFET | Infineon
BSC190N15NS3GATMA1 β ActiveSpecification Comparison
| Parameter | IPP120N08S403AKSA1 | BSC190N15NS3GATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $1.28 | $0.98 |
| Manufacturer | Infineon Technologies | β |
| Part Family | OptiMOS Power MOSFET | β |
| Transistor Type | N-Channel Enhancement Mode | β |
| Drain-to-Source Voltage (VDS) | 80 V | β |
| Continuous Drain Current (ID, Tc) | 120 A | β |
| Power Dissipation (PD, Tc) | 278 W | β |
| On-State Resistance (RDS(on)) | 2.8 mOhm at VGS=10 V, ID=100 A | β |
| Gate-Source Voltage (VGS) | +/-20 V | β |
| Total Gate Charge (Qg) | 167 nC at VGS=10 V | [DATA_NEEDED: total gate charge] |
| Input Capacitance (Ciss) | 11550 pF at VDS=25 V | β |
| Operating Junction Temperature | -55 C to +175 C | β |
| Package | TO-220-3-1 (PG-TO220-3-1) | PG-TDSON-8-1 (TDSON-8 EP) |
| Mounting Type | Through Hole | Surface Mount |
| Pin Count | 3 | β |
| MSL Level | MSL1 (peak reflow 260 C) | 1 |
| Automotive Qualification | AEC-Q101 | β |
| RoHS Status | Compliant (Green Product) | Compliant |
| Avalanche Tested | 100% Avalanche Tested | β |
| Technology | β | OptiMOS 3 (N-Channel) |
| Drain-Source Voltage (VDS) | β | 150 V |
| Continuous Drain Current (ID) at Tc=25C | β | 50 A |
| Continuous Drain Current (ID) at Tc=100C | β | [DATA_NEEDED: ID at Tc=100C] |
| Pulsed Drain Current (IDM) | β | [DATA_NEEDED: pulsed drain current] |
| Gate-Source Voltage (VGS) max | β | 20 V |
| Gate Threshold Voltage (VGS(th)) | β | 2.5 V to 3.5 V |
| On-Resistance RDS(on) max at VGS=10V | β | 19 mOhm |
| On-Resistance RDS(on) typ at VGS=10V | β | [DATA_NEEDED: RDS(on) typical at 10V] |
| Power Dissipation (PD) at Tc=25C | β | 125 W |
| Operating Temperature Range | β | -55 C to +150 C |