IPT007N06NATMA1 vs IPD90N03S4L02ATMA1 Perbandingan
Perbandingan bersamaan detil IPT007N06NATMA1 dari Infineon dan IPD90N03S4L02ATMA1 dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.
Infineon
IPD90N03S4L02ATMA1 - 30V 90A OptiMOS-T2 N-Channel MOSFET | Infineon
IPD90N03S4L02ATMA1 ✓ AktifPerbandingan Spesifikasi
| Parameter Umum | IPT007N06NATMA1 | IPD90N03S4L02ATMA1 |
|---|---|---|
| Merek | Infineon | Infineon |
| Kategori | MOSFETs | MOSFETs |
| Status Lingkungan Hidup | Aktif | Aktif |
| Technology | OptiMOS 5 (N-channel trench MOSFET) | MOSFET (Metal Oxide), OptiMOS-T2 trench |
| Drain-Source Voltage (VDS) | 60 V | — |
| Continuous Drain Current (ID, TC=25C) | 300 A | — |
| Pulsed Drain Current (IDM) | [DATA_NEEDED: pulsed drain current] | — |
| On-Resistance (RDS(on), VGS=10V max) | 0.75 mOhm | — |
| Gate-Source Voltage (VGS) | [DATA_NEEDED: VGS max] | — |
| Power Dissipation (PD, TC=25C) | 375 W | — |
| Rentang Suhu Kerja | -55 C to +175 C (TJ) | — |
| Paket | PG-HSOF-8-1 (TOLL) | PG-TO252-3-11 (DPAK, surface mount) |
| Tipe Mounting | Surface Mount | Surface Mount |
| Configuration | Single N-channel | — |
| Gate Charge (QG) | [DATA_NEEDED: total gate charge] | — |
| Avalanche Energy (EAS) | [DATA_NEEDED: single-pulse avalanche energy] | — |
| Thermal Resistance (RthJC max) | [DATA_NEEDED: RthJC] | — |
| Level MSL | MSL 1 (per JEDEC J-STD-020) | MSL1 (per JEDEC J-STD-020, up to 260°C peak reflow) |
| Status RoHS | Compliant | Compliant (Green Package) |
| Lead-Free | Yes | — |
| Bebas Halogen | Yes | — |
| Standard Pack Quantity | 3000 (Tape & Reel) | — |
| FET Type | — | N-Channel |
| Drain-to-Source Voltage (VDS) | — | 30 V |
| Continuous Drain Current (ID) at Tc | — | 90 A |
| Power Dissipation (PD) at Tc | — | 136 W |
| RDS(on) Max at VGS=10 V | — | 2.2 mΩ |
| RDS(on) Max at VGS=4.5 V | — | [DATA_NEEDED: typical value at VGS=4.5 V] |
| Gate Drive Voltage (VGS) | — | 4.5 V to 10 V |
| Gate Threshold Voltage (VGS(th)) | — | [DATA_NEEDED: typical value] |
| Suhu Hubung Kerja | — | -55°C to +175°C |
| Avalanche Rated | — | 100% Avalanche tested |
| Automotive Qualification | — | AEC-Q101 qualified |
| Series | — | OptiMOS-T2 |