IPT007N06NATMA1 vs IPD90N03S4L02ATMA1 比較
詳細並排比較 IPT007N06NATMA1 由 Infineon 與 IPD90N03S4L02ATMA1 由 Infineon. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況，以找出最符合您設計需求的元件。
Infineon
IPD90N03S4L02ATMA1 - 30V 90A OptiMOS-T2 N-Channel MOSFET | Infineon
IPD90N03S4L02ATMA1 ✓ 啟用中規格比較
| 參數 | IPT007N06NATMA1 | IPD90N03S4L02ATMA1 |
|---|---|---|
| 品牌 | Infineon | Infineon |
| 類別 | MOSFETs | MOSFETs |
| 生命週期狀態 | 啟用中 | 啟用中 |
| Technology | OptiMOS 5 (N-channel trench MOSFET) | MOSFET (Metal Oxide), OptiMOS-T2 trench |
| Drain-Source Voltage (VDS) | 60 V | — |
| Continuous Drain Current (ID, TC=25C) | 300 A | — |
| Pulsed Drain Current (IDM) | [DATA_NEEDED: pulsed drain current] | — |
| On-Resistance (RDS(on), VGS=10V max) | 0.75 mOhm | — |
| Gate-Source Voltage (VGS) | [DATA_NEEDED: VGS max] | — |
| Power Dissipation (PD, TC=25C) | 375 W | — |
| 工作溫度範圍 | -55 C to +175 C (TJ) | — |
| 封裝 | PG-HSOF-8-1 (TOLL) | PG-TO252-3-11 (DPAK, surface mount) |
| 安裝類型 | Surface Mount | Surface Mount |
| Configuration | Single N-channel | — |
| Gate Charge (QG) | [DATA_NEEDED: total gate charge] | — |
| Avalanche Energy (EAS) | [DATA_NEEDED: single-pulse avalanche energy] | — |
| Thermal Resistance (RthJC max) | [DATA_NEEDED: RthJC] | — |
| MSL 等級 | MSL 1 (per JEDEC J-STD-020) | MSL1 (per JEDEC J-STD-020, up to 260°C peak reflow) |
| RoHS 狀態 | Compliant | Compliant (Green Package) |
| Lead-Free | Yes | — |
| 無鹵素 | Yes | — |
| Standard Pack Quantity | 3000 (Tape & Reel) | — |
| FET Type | — | N-Channel |
| Drain-to-Source Voltage (VDS) | — | 30 V |
| Continuous Drain Current (ID) at Tc | — | 90 A |
| Power Dissipation (PD) at Tc | — | 136 W |
| RDS(on) Max at VGS=10 V | — | 2.2 mΩ |
| RDS(on) Max at VGS=4.5 V | — | [DATA_NEEDED: typical value at VGS=4.5 V] |
| Gate Drive Voltage (VGS) | — | 4.5 V to 10 V |
| Gate Threshold Voltage (VGS(th)) | — | [DATA_NEEDED: typical value] |
| 工作接面溫度 | — | -55°C to +175°C |
| Avalanche Rated | — | 100% Avalanche tested |
| Automotive Qualification | — | AEC-Q101 qualified |
| Series | — | OptiMOS-T2 |