IPT026N10N5ATMA1 vs IPT015N10N5ATMA1 Comparison

Detailed side-by-side comparison of IPT026N10N5ATMA1 by Infineon and IPT015N10N5ATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

Specification Comparison

Parameter IPT026N10N5ATMA1 IPT015N10N5ATMA1
Brand Infineon Infineon
Category MOSFETs MOSFETs
Lifecycle Status Active Active
Manufacturer Infineon Technologies Infineon Technologies
Product Family OptiMOS 5 —
Transistor Type N-Channel MOSFET N-Channel MOSFET
Drain-Source Voltage (VDS) 100 V —
Gate-Source Voltage (VGS) ±20 V —
Continuous Drain Current (ID, Tc=25°C) 202 A —
Continuous Drain Current (ID, Ta) 27 A —
Maximum RDS(on) at VGS=10V 2.6 mΩ —
Maximum Power Dissipation (Tc=25°C) 214 W —
Package PG-HSOF-8-1 (TOLL) PG-HSOF-8-1 (TOLL)
Mounting Type Surface Mount Surface Mount
Operating Temperature Range -55 °C to +175 °C (TJ) —
Configuration Single with built-in diode Single
Number of Terminals 8 —
Technology Trench (OptiMOS 5) OptiMOS™ 5
RoHS Status Compliant Compliant
MSL Level [DATA_NEEDED: MSL rating] —
Gate Charge (Qg typ) [DATA_NEEDED: typical Qg] —
Part Number — IPT015N10N5ATMA1
Drain-Source Voltage (VDS) Max — 100 V
Continuous Drain Current (ID, Tc) — 300 A
On-Resistance RDS(on) Max — 1.5 mΩ
Power Dissipation (PD, Tc) — 375 W
Operating Temperature — -55°C to +175°C
Gate Threshold VGS(th) — [DATA_NEEDED: VGS(th) typical and min/max]
Total Gate Charge (Qg) — [DATA_NEEDED: Qg at VGS=10V]
Output Capacitance (Coss) — Reduced up to 44% vs prior generation (per manufacturer claim)
RDS(on) Improvement vs Prior Generation — Up to 43% reduction
Packaging — Tape & Reel

Datasheets & Resources

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