IPT026N10N5ATMA1 vs IPT015N10N5ATMA1 Comparison
Detailed side-by-side comparison of IPT026N10N5ATMA1 by Infineon and IPT015N10N5ATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Infineon
IPT026N10N5ATMA1
IPT026N10N5ATMA1 - 100V 2.6mΞ© OptiMOS 5 MOSFET TOLL | Infineon
IPT026N10N5ATMA1 β ActiveInfineon
IPT015N10N5ATMA1
IPT015N10N5ATMA1 - 100V 300A 1.5mΞ© OptiMOS 5 Power MOSFET | Infineon
IPT015N10N5ATMA1 β ActiveSpecification Comparison
| Parameter | IPT026N10N5ATMA1 | IPT015N10N5ATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $1.87 | $2.78 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Product Family | OptiMOS 5 | β |
| Transistor Type | N-Channel MOSFET | N-Channel MOSFET |
| Drain-Source Voltage (VDS) | 100 V | β |
| Gate-Source Voltage (VGS) | Β±20 V | β |
| Continuous Drain Current (ID, Tc=25Β°C) | 202 A | β |
| Continuous Drain Current (ID, Ta) | 27 A | β |
| Maximum RDS(on) at VGS=10V | 2.6 mΞ© | β |
| Maximum Power Dissipation (Tc=25Β°C) | 214 W | β |
| Package | PG-HSOF-8-1 (TOLL) | PG-HSOF-8-1 (TOLL) |
| Mounting Type | Surface Mount | Surface Mount |
| Operating Temperature Range | -55 Β°C to +175 Β°C (TJ) | β |
| Configuration | Single with built-in diode | Single |
| Number of Terminals | 8 | β |
| Technology | Trench (OptiMOS 5) | OptiMOSβ’ 5 |
| RoHS Status | Compliant | Compliant |
| MSL Level | [DATA_NEEDED: MSL rating] | β |
| Gate Charge (Qg typ) | [DATA_NEEDED: typical Qg] | β |
| Part Number | β | IPT015N10N5ATMA1 |
| Drain-Source Voltage (VDS) Max | β | 100 V |
| Continuous Drain Current (ID, Tc) | β | 300 A |
| On-Resistance RDS(on) Max | β | 1.5 mΞ© |
| Power Dissipation (PD, Tc) | β | 375 W |
| Operating Temperature | β | -55Β°C to +175Β°C |
| Gate Threshold VGS(th) | β | [DATA_NEEDED: VGS(th) typical and min/max] |
| Total Gate Charge (Qg) | β | [DATA_NEEDED: Qg at VGS=10V] |
| Output Capacitance (Coss) | β | Reduced up to 44% vs prior generation (per manufacturer claim) |
| RDS(on) Improvement vs Prior Generation | β | Up to 43% reduction |
| Packaging | β | Tape & Reel |