IPT026N10N5ATMA1 vs IPT015N10N5ATMA1 Perbandingan

Perbandingan bersamaan detil IPT026N10N5ATMA1 dari Infineon dan IPT015N10N5ATMA1 dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.

Perbandingan Spesifikasi

Parameter Umum IPT026N10N5ATMA1 IPT015N10N5ATMA1
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
Manufacturer Infineon Technologies Infineon Technologies
Product Family OptiMOS 5 —
Tipe Transistor N-Channel MOSFET N-Channel MOSFET
Drain-Source Voltage (VDS) 100 V —
Gate-Source Voltage (VGS) ±20 V —
Continuous Drain Current (ID, Tc=25°C) 202 A —
Continuous Drain Current (ID, Ta) 27 A —
Maximum RDS(on) at VGS=10V 2.6 mΩ —
Maximum Power Dissipation (Tc=25°C) 214 W —
Paket PG-HSOF-8-1 (TOLL) PG-HSOF-8-1 (TOLL)
Tipe Mounting Surface Mount Surface Mount
Rentang Suhu Kerja -55 °C to +175 °C (TJ) —
Configuration Single with built-in diode Single
Number of Terminals 8 —
Technology Trench (OptiMOS 5) OptiMOS™ 5
Status RoHS Compliant Compliant
Level MSL [DATA_NEEDED: MSL rating] —
Gate Charge (Qg typ) [DATA_NEEDED: typical Qg] —
Part Number — IPT015N10N5ATMA1
Drain-Source Voltage (VDS) Max — 100 V
Continuous Drain Current (ID, Tc) — 300 A
On-Resistance RDS(on) Max — 1.5 mΩ
Power Dissipation (PD, Tc) — 375 W
Suhu Kerja — -55°C to +175°C
Gate Threshold VGS(th) — [DATA_NEEDED: VGS(th) typical and min/max]
Total Gate Charge (Qg) — [DATA_NEEDED: Qg at VGS=10V]
Output Capacitance (Coss) — Reduced up to 44% vs prior generation (per manufacturer claim)
RDS(on) Improvement vs Prior Generation — Up to 43% reduction
Packaging — Tape & Reel

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