IPT030N12N3GATMA1 vs IPB60R040CFD7ATMA1 Comparison
Detailed side-by-side comparison of IPT030N12N3GATMA1 by Infineon and IPB60R040CFD7ATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Infineon
IPT030N12N3GATMA1
IPT030N12N3GATMA1 - 120V 237A 3mΞ© N-Channel OptiMOS 3 | Infineon
IPT030N12N3GATMA1 β ActiveInfineon
IPB60R040CFD7ATMA1 - 600V 50A 40mΞ© CoolMOS CFD7 MOSFET | Infineon
IPB60R040CFD7ATMA1 β ActiveSpecification Comparison
| Parameter | IPT030N12N3GATMA1 | IPB60R040CFD7ATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $2.78 | $5.19 |
| Channel Type | N-Channel | β |
| Configuration | Single | β |
| Maximum Drain-Source Voltage (VDS) | 120 V | β |
| Maximum Gate-Source Voltage (VGS) | 20 V | β |
| Maximum Gate Threshold Voltage (VGS(th)) | [DATA_NEEDED: VGS(th) min/typ/max] | β |
| Maximum On-Resistance (RDS(on)) | 3 mΞ© | β |
| Continuous Drain Current (ID) at Ta | 24 A (Ta) | β |
| Pulsed Drain Current (IDM) at Tc | 237 A (Tc) | β |
| Power Dissipation (PD) at Ta | 3.8 W (Ta) | β |
| Power Dissipation (PD) at Tc | 375 W (Tc) | β |
| Technology | OptiMOS 3 | Superjunction (SJ) N-Channel MOSFET |
| Operating Junction Temperature | -55 Β°C to +175 Β°C | β |
| Package | PG-HSOF-8-1 (TOLL) | PG-TO263-3-2 (D2PAK) |
| Mounting Type | Surface Mount | Surface Mount |
| Automotive Qualified | Yes (per manufacturer datasheet) | β |
| RoHS Status | Compliant with Exemption | Compliant |
| Channel Mode | Enhancement | β |
| MSL Level | [DATA_NEEDED: MSL rating] | 1 |
| Manufacturer | β | Infineon Technologies |
| Product Family | β | CoolMOS CFD7 |
| Drain-Source Voltage (VDS) | β | 600 V |
| Continuous Drain Current (ID, Tc=25Β°C) | β | 50 A |
| Pulsed Drain Current (IDM) | β | [DATA_NEEDED: pulsed drain current] |
| On-Resistance RDS(on) max @ VGS=10V | β | 40 mΞ© |
| Gate Threshold Voltage VGS(th) typ | β | 4 V |
| Total Gate Charge Qg typ | β | [DATA_NEEDED: Qg] |
| Power Dissipation (Tc=25Β°C) | β | 227 W |
| Operating Temperature Range | β | -55Β°C to +150Β°C |
| Integrated Body Diode | β | Yes - ultra-fast CoolMOS CFD7 diode |
| Lead-Free | β | Yes |
| Target Applications | β | Soft-switching topologies (ZVS phase-shift full-bridge, LLC) |