IPT030N12N3GATMA1 vs IPB60R040CFD7ATMA1 Perbandingan

Perbandingan bersamaan detil IPT030N12N3GATMA1 dari Infineon dan IPB60R040CFD7ATMA1 dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.

Perbandingan Spesifikasi

Parameter Umum IPT030N12N3GATMA1 IPB60R040CFD7ATMA1
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
Status Stok — In Stock
Harga Unit (USD) — $5,19
Channel Type N-Channel —
Configuration Single —
Maximum Drain-Source Voltage (VDS) 120 V —
Maximum Gate-Source Voltage (VGS) 20 V —
Maximum Gate Threshold Voltage (VGS(th)) [DATA_NEEDED: VGS(th) min/typ/max] —
Maximum On-Resistance (RDS(on)) 3 mΩ —
Continuous Drain Current (ID) at Ta 24 A (Ta) —
Pulsed Drain Current (IDM) at Tc 237 A (Tc) —
Power Dissipation (PD) at Ta 3.8 W (Ta) —
Power Dissipation (PD) at Tc 375 W (Tc) —
Technology OptiMOS 3 Superjunction (SJ) N-Channel MOSFET
Suhu Hubung Kerja -55 °C to +175 °C —
Paket PG-HSOF-8-1 (TOLL) PG-TO263-3-2 (D2PAK)
Tipe Mounting Surface Mount Surface Mount
Automotive Qualified Yes (per manufacturer datasheet) —
Status RoHS Compliant with Exemption Compliant
Channel Mode Enhancement —
Level MSL [DATA_NEEDED: MSL rating] 1
Manufacturer — Infineon Technologies
Product Family — CoolMOS CFD7
Drain-Source Voltage (VDS) — 600 V
Continuous Drain Current (ID, Tc=25°C) — 50 A
Pulsed Drain Current (IDM) — [DATA_NEEDED: pulsed drain current]
On-Resistance RDS(on) max @ VGS=10V — 40 mΩ
Gate Threshold Voltage VGS(th) typ — 4 V
Total Gate Charge Qg typ — [DATA_NEEDED: Qg]
Dissipasi Listrik (TC=25°C) — 227 W
Rentang Suhu Kerja — -55°C to +150°C
Integrated Body Diode — Yes - ultra-fast CoolMOS CFD7 diode
Lead-Free — Yes
Target Applications — Soft-switching topologies (ZVS phase-shift full-bridge, LLC)

Spek dan Sumber

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