IPW60R037P7XKSA1 vs IPD60R360P7ATMA1 Comparison

Detailed side-by-side comparison of IPW60R037P7XKSA1 by Infineon and IPD60R360P7ATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

Infineon
IPW60R037P7XKSA1 IPW60R037P7XKSA1 - 600V 76A CoolMOS P7 MOSFET | Infineon

IPW60R037P7XKSA1 - 600V 76A CoolMOS P7 MOSFET | Infineon

IPW60R037P7XKSA1 ✓ Active

Specification Comparison

Parameter IPW60R037P7XKSA1 IPD60R360P7ATMA1
Brand Infineon Infineon
Category MOSFETs MOSFETs
Lifecycle Status Active Active
Stock Status In Stock In Stock
Unit Price (USD) $3.55 $0.61
Manufacturer Infineon Technologies Infineon Technologies
Series CoolMOS™ P7 CoolMOS P7
Transistor Type N-Channel MOSFET (Superjunction)
Drain-Source Voltage (V_DSS) 600 V
Continuous Drain Current (I_D, Tc=25 °C) 76 A
On-Resistance (R_DS(on), max, V_GS=10 V) 37 mΩ
Power Dissipation (P_D, Tc=25 °C) 255 W
Gate Threshold Voltage (V_GS(th), typ) 3.5 V
Package PG-TO247-3 (TO-247-3, through-hole)
Mounting Type Through Hole Surface Mount
Operating Junction Temperature -55 °C to +150 °C -55°C to +150°C
Technology CoolMOS Superjunction (SJ) Superjunction (SJ) N-channel MOSFET
Orderable Part Number Suffix XKSA1 (tube packaging, industrial)
RoHS Status Compliant
Avalanche Rated Yes
Drain-Source Voltage (V_DS) 600 V
Gate-Source Voltage (V_GS) ±20 V (max)
Continuous Drain Current (I_D) at T_C=25°C 9 A
Pulsed Drain Current (I_D,pulse) [DATA_NEEDED: pulsed drain current]
R_DS(on) max @ V_GS=10V 360 mΩ
Total Power Dissipation (P_tot) at T_C=25°C 41 W
Storage Temperature -55°C to +150°C
Package / Case PG-TO252-3 (DPAK), surface mount
Gate Threshold Voltage (V_GS(th)) typ 3.5 V (typ)
ESD Protection (HBM) >2 kV (per datasheet)
MSL Level 1 (per JEDEC J-STD20)
RoHS Compliance Compliant
Qualification Industrial grade per JEDEC (J-STD20, JESD22)

Datasheets & Resources

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