IPW60R037P7XKSA1 vs IPD60R360P7ATMA1 比較
詳細並排比較 IPW60R037P7XKSA1 由 Infineon 與 IPD60R360P7ATMA1 由 Infineon. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況，以找出最符合您設計需求的元件。
規格比較
| 參數 | IPW60R037P7XKSA1 | IPD60R360P7ATMA1 |
|---|---|---|
| 品牌 | Infineon | Infineon |
| 類別 | MOSFETs | MOSFETs |
| 生命週期狀態 | 啟用中 | 啟用中 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Series | CoolMOS™ P7 | CoolMOS P7 |
| 電晶體類型 | N-Channel MOSFET (Superjunction) | — |
| Drain-Source Voltage (V_DSS) | 600 V | — |
| Continuous Drain Current (I_D, Tc=25 °C) | 76 A | — |
| On-Resistance (R_DS(on), max, V_GS=10 V) | 37 mΩ | — |
| Power Dissipation (P_D, Tc=25 °C) | 255 W | — |
| Gate Threshold Voltage (V_GS(th), typ) | 3.5 V | — |
| 封裝 | PG-TO247-3 (TO-247-3, through-hole) | — |
| 安裝類型 | Through Hole | Surface Mount |
| 工作接面溫度 | -55 °C to +150 °C | -55°C to +150°C |
| Technology | CoolMOS Superjunction (SJ) | Superjunction (SJ) N-channel MOSFET |
| Orderable Part Number Suffix | XKSA1 (tube packaging, industrial) | — |
| RoHS 狀態 | Compliant | — |
| Avalanche Rated | Yes | — |
| Drain-Source Voltage (V_DS) | — | 600 V |
| Gate-Source Voltage (V_GS) | — | ±20 V (max) |
| Continuous Drain Current (I_D) at T_C=25°C | — | 9 A |
| Pulsed Drain Current (I_D,pulse) | — | [DATA_NEEDED: pulsed drain current] |
| R_DS(on) max @ V_GS=10V | — | 360 mΩ |
| Total Power Dissipation (P_tot) at T_C=25°C | — | 41 W |
| Storage Temperature | — | -55°C to +150°C |
| 封裝 / 外殼 | — | PG-TO252-3 (DPAK), surface mount |
| Gate Threshold Voltage (V_GS(th)) typ | — | 3.5 V (typ) |
| ESD Protection (HBM) | — | >2 kV (per datasheet) |
| MSL 等級 | — | 1 (per JEDEC J-STD20) |
| RoHS Compliance | — | Compliant |
| Qualification | — | Industrial grade per JEDEC (J-STD20, JESD22) |