IQD005N04NM6ATMA1 vs ISC011N04NM7VATMA1 Comparison

Detailed side-by-side comparison of IQD005N04NM6ATMA1 by Infineon and ISC011N04NM7VATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

Infineon
IQD005N04NM6ATMA1

IQD005N04NM6ATMA1 - 40V 0.5mΞ© N-Ch MOSFET PG-TSON-8-9 | Infineon

IQD005N04NM6ATMA1 βœ“ Active
Infineon
ISC011N04NM7VATMA1

ISC011N04NM7VATMA1 - 40V 1.1mΞ© OptiMOS 7 N-MOSFET | Infineon

ISC011N04NM7VATMA1 βœ“ Active

Specification Comparison

Parameter IQD005N04NM6ATMA1 ISC011N04NM7VATMA1
Brand Infineon Infineon
Category MOSFETs MOSFETs
Lifecycle Status Active Active
Stock Status In Stock In Stock
Unit Price (USD) $0.82 $0.41
Manufacturer Infineon Technologies Infineon Technologies
Product Family OptiMOS 6 Power-Transistor OptiMOS 7 Power-Transistor
Polarity / Channel Type N-Channel β€”
Drain-Source Voltage (VDS) 40 V 40 V
Continuous Drain Current (ID) at Ta=25C 58 A β€”
Pulsed Drain Current (IDM) at Tc 610 A β€”
On-Resistance RDS(on) max @ VGS=10V 0.5 mOhm 1.1 mΞ©
Power Dissipation (Ta) 3 W β€”
Power Dissipation (Tc) 333 W β€”
Package PG-TSON-8-9 (PQFN 5x6 mm) PG-TDSON-8 (source-down)
Mounting Type Surface Mount Surface Mount
Operating Temperature Range -55C to +150C -55 Β°C to +175 Β°C (TJ)
Gate Threshold Voltage (VGS(th) typ) [DATA_NEEDED: VGS(th) typical] β€”
Technology OptiMOS 6 trench MOSFET Trench MOSFET, silicon
RoHS Status Compliant β€”
MSL Level 1 MSL 1 (per JEDEC J-STD-020)
FET Type β€” N-Channel
Continuous Drain Current (ID) at TA=25Β°C β€” 38 A
Continuous Drain Current (ID) at TC β€” 256 A
Power Dissipation (TA) β€” 3 W
Power Dissipation (TC) β€” 136 W
Gate Threshold Voltage (Vth) β€” Up to 3.2 V
Short-Circuit Withstand β€” Yes (current-limited)
RoHS Compliance β€” Compliant (per Infineon product page)

Datasheets & Resources

Browse All Products Create BOM Request Quote