IQD005N04NM6ATMA1 vs ISC011N04NM7VATMA1 Perbandingan
Perbandingan bersamaan detil IQD005N04NM6ATMA1 dari Infineon dan ISC011N04NM7VATMA1 dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.
Perbandingan Spesifikasi
| Parameter Umum | IQD005N04NM6ATMA1 | ISC011N04NM7VATMA1 |
|---|---|---|
| Merek | Infineon | Infineon |
| Kategori | MOSFETs | MOSFETs |
| Status Lingkungan Hidup | Aktif | Aktif |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Product Family | OptiMOS 6 Power-Transistor | OptiMOS 7 Power-Transistor |
| Polarity / Channel Type | N-Channel | — |
| Drain-Source Voltage (VDS) | 40 V | 40 V |
| Continuous Drain Current (ID) at Ta=25C | 58 A | — |
| Pulsed Drain Current (IDM) at Tc | 610 A | — |
| On-Resistance RDS(on) max @ VGS=10V | 0.5 mOhm | 1.1 mΩ |
| Power Dissipation (Ta) | 3 W | — |
| Power Dissipation (Tc) | 333 W | — |
| Paket | PG-TSON-8-9 (PQFN 5x6 mm) | PG-TDSON-8 (source-down) |
| Tipe Mounting | Surface Mount | Surface Mount |
| Rentang Suhu Kerja | -55C to +150C | -55 °C to +175 °C (TJ) |
| Gate Threshold Voltage (VGS(th) typ) | [DATA_NEEDED: VGS(th) typical] | — |
| Technology | OptiMOS 6 trench MOSFET | Trench MOSFET, silicon |
| Status RoHS | Compliant | — |
| Level MSL | 1 | MSL 1 (per JEDEC J-STD-020) |
| FET Type | — | N-Channel |
| Continuous Drain Current (ID) at TA=25°C | — | 38 A |
| Continuous Drain Current (ID) at TC | — | 256 A |
| Power Dissipation (TA) | — | 3 W |
| Power Dissipation (TC) | — | 136 W |
| Gate Threshold Voltage (Vth) | — | Up to 3.2 V |
| Short-Circuit Withstand | — | Yes (current-limited) |
| RoHS Compliance | — | Compliant (per Infineon product page) |