IQD005N04NM6ATMA1 vs ISC011N04NM7VATMA1 Pengandingan
Pengandingan Sisi Kiri Sisi Kanan Terperinci IQD005N04NM6ATMA1 disebabkan oleh Infineon dan ISC011N04NM7VATMA1 disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.
Pengandingan Spesifikasi
| Parametr | IQD005N04NM6ATMA1 | ISC011N04NM7VATMA1 |
|---|---|---|
| Merek | Infineon | Infineon |
| Kategori | MOSFETs | MOSFETs |
| Status Lingkungan Hidup | Aktif | Aktif |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Product Family | OptiMOS 6 Power-Transistor | OptiMOS 7 Power-Transistor |
| Polarity / Channel Type | N-Channel | — |
| Drain-Source Voltage (VDS) | 40 V | 40 V |
| Continuous Drain Current (ID) at Ta=25C | 58 A | — |
| Pulsed Drain Current (IDM) at Tc | 610 A | — |
| On-Resistance RDS(on) max @ VGS=10V | 0.5 mOhm | 1.1 mΩ |
| Power Dissipation (Ta) | 3 W | — |
| Power Dissipation (Tc) | 333 W | — |
| Kemasan | PG-TSON-8-9 (PQFN 5x6 mm) | PG-TDSON-8 (source-down) |
| Jenis Pemasangan | Surface Mount | Surface Mount |
| Gambaran Suhu Operasi | -55C to +150C | -55 °C to +175 °C (TJ) |
| Gate Threshold Voltage (VGS(th) typ) | [DATA_NEEDED: VGS(th) typical] | — |
| Technology | OptiMOS 6 trench MOSFET | Trench MOSFET, silicon |
| Status RoHS | Compliant | — |
| Aras MSL | 1 | MSL 1 (per JEDEC J-STD-020) |
| FET Type | — | N-Channel |
| Continuous Drain Current (ID) at TA=25°C | — | 38 A |
| Continuous Drain Current (ID) at TC | — | 256 A |
| Power Dissipation (TA) | — | 3 W |
| Power Dissipation (TC) | — | 136 W |
| Gate Threshold Voltage (Vth) | — | Up to 3.2 V |
| Short-Circuit Withstand | — | Yes (current-limited) |
| RoHS Compliance | — | Compliant (per Infineon product page) |