IQD005N04NM6ATMA1 vs ISC011N04NM7VATMA1 Ikinahambing

Detalyadong pagkakahiwalay na pagkakahambing ng IQD005N04NM6ATMA1 sa pamamagitan ng Infineon at ISC011N04NM7VATMA1 sa pamamagitan ng Infineon. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.

Infineon
ISC011N04NM7VATMA1 ISC011N04NM7VATMA1 - 40V 1.1mΩ OptiMOS 7 N-MOSFET | Infineon

ISC011N04NM7VATMA1 - 40V 1.1mΩ OptiMOS 7 N-MOSFET | Infineon

ISC011N04NM7VATMA1 ✓ Nakahanda

Pagsanggunian na paghahambing

Parametro IQD005N04NM6ATMA1 ISC011N04NM7VATMA1
Brand Infineon Infineon
Kategorya MOSFETs MOSFETs
Katayuan ng Lifecycle Aktibo Aktibo
Manufacturer Infineon Technologies Infineon Technologies
Product Family OptiMOS 6 Power-Transistor OptiMOS 7 Power-Transistor
Polarity / Channel Type N-Channel —
Drain-Source Voltage (VDS) 40 V 40 V
Continuous Drain Current (ID) at Ta=25C 58 A —
Pulsed Drain Current (IDM) at Tc 610 A —
On-Resistance RDS(on) max @ VGS=10V 0.5 mOhm 1.1 mΩ
Power Dissipation (Ta) 3 W —
Power Dissipation (Tc) 333 W —
Packhaging PG-TSON-8-9 (PQFN 5x6 mm) PG-TDSON-8 (source-down)
Uri ng Pagpapasok Surface Mount Surface Mount
Hanay ng Temperature na Operasyon -55C to +150C -55 °C to +175 °C (TJ)
Gate Threshold Voltage (VGS(th) typ) [DATA_NEEDED: VGS(th) typical] —
Technology OptiMOS 6 trench MOSFET Trench MOSFET, silicon
Tindminan RoHS Compliant —
Level ng MSL 1 MSL 1 (per JEDEC J-STD-020)
FET Type — N-Channel
Continuous Drain Current (ID) at TA=25°C — 38 A
Continuous Drain Current (ID) at TC — 256 A
Power Dissipation (TA) — 3 W
Power Dissipation (TC) — 136 W
Gate Threshold Voltage (Vth) — Up to 3.2 V
Short-Circuit Withstand — Yes (current-limited)
RoHS Compliance — Compliant (per Infineon product page)

Mga Datasheets at Resources

Tingnan ang Lahat ng mga Produkto Lumikha ng BOM Hilingin ang Kita