IQD005N04NM6CGATMA1 vs BSZ024N04LS6ATMA1 Comparison
Detailed side-by-side comparison of IQD005N04NM6CGATMA1 by Infineon and BSZ024N04LS6ATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Infineon
IQD005N04NM6CGATMA1
IQD005N04NM6CGATMA1 - 40V 0.5mΞ© OptiMOS 6 MOSFET | Infineon
IQD005N04NM6CGATMA1 β Active
Specification Comparison
| Parameter | IQD005N04NM6CGATMA1 | BSZ024N04LS6ATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $1.62 | $0.46 |
| FET Type | N-Channel | β |
| Technology | OptiMOS 6 (trench FET) | OptiMOS 6 (shielded-gate trench) |
| Drain-to-Source Voltage (VDS) | 40 V | β |
| Gate-to-Source Voltage (VGS) | [DATA_NEEDED: VGS max rating] | β |
| RDS(on) Typical | 0.5 mΞ© | β |
| Continuous Drain Current (ID) at Ta | 58 A | β |
| Continuous Drain Current (ID) at Tc | 610 A | β |
| Pulsed Drain Current (IDM) | [DATA_NEEDED: IDM pulsed rating] | β |
| Power Dissipation at Ta | 3 W | β |
| Power Dissipation at Tc | 333 W | β |
| Operating Temperature Range | -55 Β°C to +150 Β°C (TJ) | β |
| Package | PG-TTFN-9-U02 (Source-Down 5x6 mmΒ²) | PG-TSDSON-8-FL (3.3 mm x 3.3 mm) |
| Mounting Type | Surface Mount | Surface Mount, top-side drain pad |
| Pin Count | 9 | β |
| MSL Level | [DATA_NEEDED: MSL rating] | 1 (per JEDEC J-STD-020) |
| RoHS Status | Compliant | Compliant |
| Lead-Free | Yes | β |
| Source Configuration | Source-Down (bottom-side source for PCB heatsinking) | β |
| Transistor Type | β | N-Channel MOSFET |
| Drain-Source Voltage (V_DS) | β | 40 V |
| Continuous Drain Current (I_D, Ta) | β | 24 A |
| Continuous Drain Current (I_D, Tc) | β | 40 A |
| Pulsed Drain Current (I_DM) | β | 130 A |
| R_DS(on) Max @ V_GS=10V | β | 2.4 mΞ© |
| R_DS(on) Max @ V_GS=4.5V | β | [DATA_NEEDED: R_DS(on) at 4.5V] |
| Gate Threshold Voltage (V_GS(th)) | β | 2.3 V (typical) |
| Total Gate Charge (Q_g) @ V_GS=10V | β | 25 nC |
| Input Capacitance (C_iss) | β | 1.8 nF |
| Output Capacitance (C_oss) | β | 19 pF |
| Power Dissipation (P_D, Ta) | β | 2.5 W |
| Power Dissipation (P_D, Tc) | β | 75 W |
| Operating Junction Temperature | β | -55Β°C to +175Β°C |