IQD005N04NM6CGATMA1 vs BSZ024N04LS6ATMA1 Perbandingan
Perbandingan bersamaan detil IQD005N04NM6CGATMA1 dari Infineon dan BSZ024N04LS6ATMA1 dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.
Perbandingan Spesifikasi
| Parameter Umum | IQD005N04NM6CGATMA1 | BSZ024N04LS6ATMA1 |
|---|---|---|
| Merek | Infineon | Infineon |
| Kategori | MOSFETs | MOSFETs |
| Status Lingkungan Hidup | Aktif | Aktif |
| FET Type | N-Channel | — |
| Technology | OptiMOS 6 (trench FET) | OptiMOS 6 (shielded-gate trench) |
| Drain-to-Source Voltage (VDS) | 40 V | — |
| Gate-to-Source Voltage (VGS) | [DATA_NEEDED: VGS max rating] | — |
| RDS(on) Typical | 0.5 mΩ | — |
| Continuous Drain Current (ID) at Ta | 58 A | — |
| Continuous Drain Current (ID) at Tc | 610 A | — |
| Pulsed Drain Current (IDM) | [DATA_NEEDED: IDM pulsed rating] | — |
| Power Dissipation at Ta | 3 W | — |
| Power Dissipation at Tc | 333 W | — |
| Rentang Suhu Kerja | -55 °C to +150 °C (TJ) | — |
| Paket | PG-TTFN-9-U02 (Source-Down 5x6 mm²) | PG-TSDSON-8-FL (3.3 mm x 3.3 mm) |
| Tipe Mounting | Surface Mount | Surface Mount, top-side drain pad |
| Jumlah Pin | 9 | — |
| Level MSL | [DATA_NEEDED: MSL rating] | 1 (per JEDEC J-STD-020) |
| Status RoHS | Compliant | Compliant |
| Lead-Free | Yes | — |
| Source Configuration | Source-Down (bottom-side source for PCB heatsinking) | — |
| Tipe Transistor | — | N-Channel MOSFET |
| Drain-Source Voltage (V_DS) | — | 40 V |
| Continuous Drain Current (I_D, Ta) | — | 24 A |
| Continuous Drain Current (I_D, Tc) | — | 40 A |
| Pulsed Drain Current (I_DM) | — | 130 A |
| R_DS(on) Max @ V_GS=10V | — | 2.4 mΩ |
| R_DS(on) Max @ V_GS=4.5V | — | [DATA_NEEDED: R_DS(on) at 4.5V] |
| Gate Threshold Voltage (V_GS(th)) | — | 2.3 V (typical) |
| Total Gate Charge (Q_g) @ V_GS=10V | — | 25 nC |
| Input Capacitance (C_iss) | — | 1.8 nF |
| Output Capacitance (C_oss) | — | 19 pF |
| Power Dissipation (P_D, Ta) | — | 2.5 W |
| Power Dissipation (P_D, Tc) | — | 75 W |
| Suhu Hubung Kerja | — | -55°C to +175°C |