IQD005N04NM6CGATMA1 vs BSZ024N04LS6ATMA1 Ikinahambing
Detalyadong pagkakahiwalay na pagkakahambing ng IQD005N04NM6CGATMA1 sa pamamagitan ng Infineon at BSZ024N04LS6ATMA1 sa pamamagitan ng Infineon. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.
Infineon
IQD005N04NM6CGATMA1 - 40V 0.5mΩ OptiMOS 6 MOSFET | Infineon
IQD005N04NM6CGATMA1 ✓ Nakahanda
Pagsanggunian na paghahambing
| Parametro | IQD005N04NM6CGATMA1 | BSZ024N04LS6ATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Kategorya | MOSFETs | MOSFETs |
| Katayuan ng Lifecycle | Aktibo | Aktibo |
| FET Type | N-Channel | — |
| Technology | OptiMOS 6 (trench FET) | OptiMOS 6 (shielded-gate trench) |
| Drain-to-Source Voltage (VDS) | 40 V | — |
| Gate-to-Source Voltage (VGS) | [DATA_NEEDED: VGS max rating] | — |
| RDS(on) Typical | 0.5 mΩ | — |
| Continuous Drain Current (ID) at Ta | 58 A | — |
| Continuous Drain Current (ID) at Tc | 610 A | — |
| Pulsed Drain Current (IDM) | [DATA_NEEDED: IDM pulsed rating] | — |
| Power Dissipation at Ta | 3 W | — |
| Power Dissipation at Tc | 333 W | — |
| Hanay ng Temperature na Operasyon | -55 °C to +150 °C (TJ) | — |
| Packhaging | PG-TTFN-9-U02 (Source-Down 5x6 mm²) | PG-TSDSON-8-FL (3.3 mm x 3.3 mm) |
| Uri ng Pagpapasok | Surface Mount | Surface Mount, top-side drain pad |
| Bilang ng Pin | 9 | — |
| Level ng MSL | [DATA_NEEDED: MSL rating] | 1 (per JEDEC J-STD-020) |
| Tindminan RoHS | Compliant | Compliant |
| Lead-Free | Yes | — |
| Source Configuration | Source-Down (bottom-side source for PCB heatsinking) | — |
| Uri ng Transistor | — | N-Channel MOSFET |
| Drain-Source Voltage (V_DS) | — | 40 V |
| Continuous Drain Current (I_D, Ta) | — | 24 A |
| Continuous Drain Current (I_D, Tc) | — | 40 A |
| Pulsed Drain Current (I_DM) | — | 130 A |
| R_DS(on) Max @ V_GS=10V | — | 2.4 mΩ |
| R_DS(on) Max @ V_GS=4.5V | — | [DATA_NEEDED: R_DS(on) at 4.5V] |
| Gate Threshold Voltage (V_GS(th)) | — | 2.3 V (typical) |
| Total Gate Charge (Q_g) @ V_GS=10V | — | 25 nC |
| Input Capacitance (C_iss) | — | 1.8 nF |
| Output Capacitance (C_oss) | — | 19 pF |
| Power Dissipation (P_D, Ta) | — | 2.5 W |
| Power Dissipation (P_D, Tc) | — | 75 W |
| Temperature ng Junction na Operasyon | — | -55°C to +175°C |