IQD020N10NM5CGATMA1 vs IQEH68NE2LM7UCGATMA1 Ikinahambing
Detalyadong pagkakahiwalay na pagkakahambing ng IQD020N10NM5CGATMA1 sa pamamagitan ng Infineon at IQEH68NE2LM7UCGATMA1 sa pamamagitan ng Infineon. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.
Infineon
IQD020N10NM5CGATMA1 - 100V 2.0mΩ OptiMOS™ 5 N-MOSFET | Infineon
IQD020N10NM5CGATMA1 ✓ NakahandaInfineon
IQEH68NE2LM7UCGATMA1 - 25V OptiMOS 7 N-MOSFET, 338A | Infineon
IQEH68NE2LM7UCGATMA1 ✓ NakahandaPagsanggunian na paghahambing
| Parametro | IQD020N10NM5CGATMA1 | IQEH68NE2LM7UCGATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Kategorya | MOSFETs | MOSFETs |
| Katayuan ng Lifecycle | Aktibo | Aktibo |
| Technology | OptiMOS™ 5 N-channel trench MOSFET | OptiMOS 7 trench MOSFET |
| Drain-Source Voltage (VDS) | 100 V | 25 V |
| Gate-Source Voltage (VGS) | ±20 V | — |
| Continuous Drain Current (ID) at TA=25°C | 26 A | — |
| Continuous Drain Current (ID) at TC=25°C | [DATA_NEEDED: ID at TC=25°C from datasheet curve] | — |
| Pulsed Drain Current (IDM) at TC=25°C | 273 A | — |
| Static Drain-Source On-Resistance RDS(on) max | 2.0 mΩ (at VGS=10V) | — |
| Power Dissipation (TA) | 3 W | — |
| Power Dissipation (TC) | 333 W | — |
| Hanay ng Temperature na Operasyon | -55°C to +175°C | -55 °C to +175 °C (typical for OptiMOS 7) |
| Packhaging | PG-TTFN-9-U02 (PQFN 5x6 mm²) | PG-TTFN-9-3 (surface mount) |
| Uri ng Pagpapasok | Surface Mount | Surface Mount |
| Level ng MSL | [DATA_NEEDED: MSL rating from datasheet] | [DATA_NEEDED: MSL Level] |
| Tindminan RoHS | Compliant | Compliant (per distributor listing) |
| Qualification | Industrial grade (Infineon OptiMOS™ 5 family) | — |
| Manufacturer | — | Infineon Technologies |
| Series | — | OptiMOS 7 |
| Uri ng Transistor | — | N-Channel MOSFET |
| Continuous Drain Current (ID) @ Ta | — | 47 A |
| Pulsed Drain Current (IDM) @ Tc | — | 338 A |
| Power Dissipation (PD) @ Ta | — | 2.5 W |
| Power Dissipation (PD) @ Tc | — | 130 W |
| Gate Threshold Voltage Type | — | Logic-level (per OptiMOS 7 family) |
| On-Resistance Family | — | RDS(on)10 / RDS(on)45 (10V and 4.5V rated) |
| Maximum Junction Temperature | — | 175 °C |
| Packaging | — | Tape & Reel (per ATMA1 suffix) |