IQD020N10NM5CGATMA1 vs IQEH68NE2LM7UCGATMA1 Perbandingan

Perbandingan bersamaan detil IQD020N10NM5CGATMA1 dari Infineon dan IQEH68NE2LM7UCGATMA1 dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.

Infineon
IQEH68NE2LM7UCGATMA1 IQEH68NE2LM7UCGATMA1 - 25V OptiMOS 7 N-MOSFET, 338A | Infineon

IQEH68NE2LM7UCGATMA1 - 25V OptiMOS 7 N-MOSFET, 338A | Infineon

IQEH68NE2LM7UCGATMA1 ✓ Aktif

Perbandingan Spesifikasi

Parameter Umum IQD020N10NM5CGATMA1 IQEH68NE2LM7UCGATMA1
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
Technology OptiMOS™ 5 N-channel trench MOSFET OptiMOS 7 trench MOSFET
Drain-Source Voltage (VDS) 100 V 25 V
Gate-Source Voltage (VGS) ±20 V —
Continuous Drain Current (ID) at TA=25°C 26 A —
Continuous Drain Current (ID) at TC=25°C [DATA_NEEDED: ID at TC=25°C from datasheet curve] —
Pulsed Drain Current (IDM) at TC=25°C 273 A —
Static Drain-Source On-Resistance RDS(on) max 2.0 mΩ (at VGS=10V) —
Power Dissipation (TA) 3 W —
Power Dissipation (TC) 333 W —
Rentang Suhu Kerja -55°C to +175°C -55 °C to +175 °C (typical for OptiMOS 7)
Paket PG-TTFN-9-U02 (PQFN 5x6 mm²) PG-TTFN-9-3 (surface mount)
Tipe Mounting Surface Mount Surface Mount
Level MSL [DATA_NEEDED: MSL rating from datasheet] [DATA_NEEDED: MSL Level]
Status RoHS Compliant Compliant (per distributor listing)
Qualification Industrial grade (Infineon OptiMOS™ 5 family) —
Manufacturer — Infineon Technologies
Series — OptiMOS 7
Tipe Transistor — N-Channel MOSFET
Continuous Drain Current (ID) @ Ta — 47 A
Pulsed Drain Current (IDM) @ Tc — 338 A
Power Dissipation (PD) @ Ta — 2.5 W
Power Dissipation (PD) @ Tc — 130 W
Gate Threshold Voltage Type — Logic-level (per OptiMOS 7 family)
On-Resistance Family — RDS(on)10 / RDS(on)45 (10V and 4.5V rated)
Maximum Junction Temperature — 175 °C
Packaging — Tape & Reel (per ATMA1 suffix)

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