IQD020N10NM5CGSCATMA1 vs IQDH88N06LM5CGSCATMA1 Comparison
Detailed side-by-side comparison of IQD020N10NM5CGSCATMA1 by Infineon and IQDH88N06LM5CGSCATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Infineon
IQD020N10NM5CGSCATMA1
IQD020N10NM5CGSCATMA1 - 100V 276A N-Channel MOSFET | Infineon
IQD020N10NM5CGSCATMA1 β ActiveInfineon
IQDH88N06LM5CGSCATMA1
IQDH88N06LM5CGSCATMA1 - 60V N-Ch MOSFET 0.86mΞ© | Infineon
IQDH88N06LM5CGSCATMA1 β ActiveSpecification Comparison
| Parameter | IQD020N10NM5CGSCATMA1 | IQDH88N06LM5CGSCATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $3.20 | $2.31 |
| Manufacturer | Infineon Technologies | β |
| Product Family | OptiMOS 5 100V (IQD series) | β |
| Transistor Type | N-Channel MOSFET | N-Channel MOSFET |
| Drain-Source Voltage (VDS) | 100 V | β |
| Continuous Drain Current (ID, Tc) | 276 A | β |
| Continuous Drain Current (ID, Ta) | 26 A | β |
| On-Resistance (RDS(on), max) | 2.0 mOhm at VGS = 10 V | β |
| On-Resistance (RDS(on)) - JLCPCB listing | 1.8 mOhm at VGS = 10 V | β |
| Gate Threshold Voltage (VGS(th), typ) | 3.8 V | β |
| Gate Charge (Qg, total) | 107 nC at VGS = 10 V | β |
| Input Capacitance (Ciss) | 7.3 nF | β |
| Output Capacitance (Coss) | 1 nF | β |
| Reverse Transfer Capacitance (Crss) | 42 pF | β |
| Power Dissipation (Ta) | 3 W | β |
| Power Dissipation (Tc) | 333 W | β |
| Operating Junction Temperature | -55C to +175C | β |
| Package | PG-WHTFN-9-U02 (PQFN 5x6 mm) with exposed thermal pad | PG-WHTFN-9-U02 (PQFN 5x6) |
| Mounting Type | Surface Mount | Surface Mount |
| RoHS Status | Compliant | Compliant |
| Gate Drive Level | Logic-level (10 V VGS rated) | β |
| Technology | β | OptiMOS 5 (trench) |
| Drain-Source Voltage (V(BR)DSS) | β | 60 V |
| Continuous Drain Current (Ta=25Β°C) | β | 42 A |
| Continuous Drain Current (Tc=25Β°C) | β | 447 A |
| On-Resistance RDS(on) typical @ VGS=10V | β | 0.86 mΞ© |
| Power Dissipation (Ta=25Β°C) | β | 3 W |
| Power Dissipation (Tc=25Β°C) | β | 333 W |
| Gate Threshold Voltage VGS(th) | β | [DATA_NEEDED: VGS(th) typical] |
| Gate Charge Qg typical | β | [DATA_NEEDED: Qg typical nC] |
| Operating Temperature Range | β | -55Β°C to +175Β°C (TJ) |
| Pin Count | β | 9 (with exposed pad) |
| Cooling | β | Dual-side cooling capable |
| MSL Level | β | 1 (per JEDEC J-STD-020) |
| Polarity | β | N-Channel |
| Configuration | β | Single |