IQD020N10NM5CGSCATMA1 vs IQDH88N06LM5CGSCATMA1 Pengandingan

Pengandingan Sisi Kiri Sisi Kanan Terperinci IQD020N10NM5CGSCATMA1 disebabkan oleh Infineon dan IQDH88N06LM5CGSCATMA1 disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.

Infineon
IQD020N10NM5CGSCATMA1 IQD020N10NM5CGSCATMA1 - 100V 276A N-Channel MOSFET | Infineon

IQD020N10NM5CGSCATMA1 - 100V 276A N-Channel MOSFET | Infineon

IQD020N10NM5CGSCATMA1 ✓ Aktif
Infineon
IQDH88N06LM5CGSCATMA1 IQDH88N06LM5CGSCATMA1 - 60V N-Ch MOSFET 0.86mΩ | Infineon

IQDH88N06LM5CGSCATMA1 - 60V N-Ch MOSFET 0.86mΩ | Infineon

IQDH88N06LM5CGSCATMA1 ✓ Aktif

Pengandingan Spesifikasi

Parametr IQD020N10NM5CGSCATMA1 IQDH88N06LM5CGSCATMA1
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
Manufacturer Infineon Technologies —
Product Family OptiMOS 5 100V (IQD series) —
Jenis Transistor N-Channel MOSFET N-Channel MOSFET
Drain-Source Voltage (VDS) 100 V —
Continuous Drain Current (ID, Tc) 276 A —
Continuous Drain Current (ID, Ta) 26 A —
On-Resistance (RDS(on), max) 2.0 mOhm at VGS = 10 V —
On-Resistance (RDS(on)) - JLCPCB listing 1.8 mOhm at VGS = 10 V —
Gate Threshold Voltage (VGS(th), typ) 3.8 V —
Gate Charge (Qg, total) 107 nC at VGS = 10 V —
Input Capacitance (Ciss) 7.3 nF —
Output Capacitance (Coss) 1 nF —
Reverse Transfer Capacitance (Crss) 42 pF —
Power Dissipation (Ta) 3 W —
Power Dissipation (Tc) 333 W —
Suhu Hubungan Operasi -55C to +175C —
Kemasan PG-WHTFN-9-U02 (PQFN 5x6 mm) with exposed thermal pad PG-WHTFN-9-U02 (PQFN 5x6)
Jenis Pemasangan Surface Mount Surface Mount
Status RoHS Compliant Compliant
Gate Drive Level Logic-level (10 V VGS rated) —
Technology — OptiMOS 5 (trench)
Drain-Source Voltage (V(BR)DSS) — 60 V
Continuous Drain Current (Ta=25°C) — 42 A
Arus Kumpal Tetap (TC=25°C) — 447 A
On-Resistance RDS(on) typical @ VGS=10V — 0.86 mΩ
Power Dissipation (Ta=25°C) — 3 W
Pembuangan Kuasa (TC=25°C) — 333 W
Gate Threshold Voltage VGS(th) — [DATA_NEEDED: VGS(th) typical]
Gate Charge Qg typical — [DATA_NEEDED: Qg typical nC]
Gambaran Suhu Operasi — -55°C to +175°C (TJ)
Kiraan Pin — 9 (with exposed pad)
Cooling — Dual-side cooling capable
Aras MSL — 1 (per JEDEC J-STD-020)
Polarity — N-Channel
Configuration — Single

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