IQD020N10NM5CGSCATMA1 vs IQDH88N06LM5CGSCATMA1 Ikinahambing
Detalyadong pagkakahiwalay na pagkakahambing ng IQD020N10NM5CGSCATMA1 sa pamamagitan ng Infineon at IQDH88N06LM5CGSCATMA1 sa pamamagitan ng Infineon. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.
Infineon
IQD020N10NM5CGSCATMA1 - 100V 276A N-Channel MOSFET | Infineon
IQD020N10NM5CGSCATMA1 ✓ NakahandaInfineon
IQDH88N06LM5CGSCATMA1 - 60V N-Ch MOSFET 0.86mΩ | Infineon
IQDH88N06LM5CGSCATMA1 ✓ NakahandaPagsanggunian na paghahambing
| Parametro | IQD020N10NM5CGSCATMA1 | IQDH88N06LM5CGSCATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Kategorya | MOSFETs | MOSFETs |
| Katayuan ng Lifecycle | Aktibo | Aktibo |
| Manufacturer | Infineon Technologies | — |
| Product Family | OptiMOS 5 100V (IQD series) | — |
| Uri ng Transistor | N-Channel MOSFET | N-Channel MOSFET |
| Drain-Source Voltage (VDS) | 100 V | — |
| Continuous Drain Current (ID, Tc) | 276 A | — |
| Continuous Drain Current (ID, Ta) | 26 A | — |
| On-Resistance (RDS(on), max) | 2.0 mOhm at VGS = 10 V | — |
| On-Resistance (RDS(on)) - JLCPCB listing | 1.8 mOhm at VGS = 10 V | — |
| Gate Threshold Voltage (VGS(th), typ) | 3.8 V | — |
| Gate Charge (Qg, total) | 107 nC at VGS = 10 V | — |
| Input Capacitance (Ciss) | 7.3 nF | — |
| Output Capacitance (Coss) | 1 nF | — |
| Reverse Transfer Capacitance (Crss) | 42 pF | — |
| Power Dissipation (Ta) | 3 W | — |
| Power Dissipation (Tc) | 333 W | — |
| Temperature ng Junction na Operasyon | -55C to +175C | — |
| Packhaging | PG-WHTFN-9-U02 (PQFN 5x6 mm) with exposed thermal pad | PG-WHTFN-9-U02 (PQFN 5x6) |
| Uri ng Pagpapasok | Surface Mount | Surface Mount |
| Tindminan RoHS | Compliant | Compliant |
| Gate Drive Level | Logic-level (10 V VGS rated) | — |
| Technology | — | OptiMOS 5 (trench) |
| Drain-Source Voltage (V(BR)DSS) | — | 60 V |
| Continuous Drain Current (Ta=25°C) | — | 42 A |
| Patuloy na Drain Current (TC=25°C) | — | 447 A |
| On-Resistance RDS(on) typical @ VGS=10V | — | 0.86 mΩ |
| Power Dissipation (Ta=25°C) | — | 3 W |
| Pwersang Pinahihigpit (TC=25°C) | — | 333 W |
| Gate Threshold Voltage VGS(th) | — | [DATA_NEEDED: VGS(th) typical] |
| Gate Charge Qg typical | — | [DATA_NEEDED: Qg typical nC] |
| Hanay ng Temperature na Operasyon | — | -55°C to +175°C (TJ) |
| Bilang ng Pin | — | 9 (with exposed pad) |
| Cooling | — | Dual-side cooling capable |
| Level ng MSL | — | 1 (per JEDEC J-STD-020) |
| Polarity | — | N-Channel |
| Configuration | — | Single |