IQDH88N06LM5CGSCATMA1 vs IQDH88N06LM5SCATMA1 Pengandingan
Pengandingan Sisi Kiri Sisi Kanan Terperinci IQDH88N06LM5CGSCATMA1 disebabkan oleh Infineon dan IQDH88N06LM5SCATMA1 disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.
Infineon
IQDH88N06LM5SCATMA1 - 60V 447A 0.7mOhm OptiMOS 5 N-MOSFET | Infineon
IQDH88N06LM5SCATMA1 ✓ AktifPengandingan Spesifikasi
| Parametr | IQDH88N06LM5CGSCATMA1 | IQDH88N06LM5SCATMA1 |
|---|---|---|
| Merek | Infineon | Infineon |
| Kategori | MOSFETs | MOSFETs |
| Status Lingkungan Hidup | Aktif | Aktif |
| Jenis Transistor | N-Channel MOSFET | — |
| Technology | OptiMOS 5 (trench) | N-Channel MOSFET (OptiMOS 5) |
| Drain-Source Voltage (V(BR)DSS) | 60 V | — |
| Continuous Drain Current (Ta=25°C) | 42 A | — |
| Arus Kumpal Tetap (TC=25°C) | 447 A | — |
| On-Resistance RDS(on) typical @ VGS=10V | 0.86 mΩ | — |
| Power Dissipation (Ta=25°C) | 3 W | — |
| Pembuangan Kuasa (TC=25°C) | 333 W | — |
| Gate Threshold Voltage VGS(th) | [DATA_NEEDED: VGS(th) typical] | — |
| Gate Charge Qg typical | [DATA_NEEDED: Qg typical nC] | — |
| Gambaran Suhu Operasi | -55°C to +175°C (TJ) | -55 C to +175 C |
| Kemasan | PG-WHTFN-9-U02 (PQFN 5x6) | PG-WHSON-8-U02 (source-down, dual-side cooling) |
| Jenis Pemasangan | Surface Mount | Surface Mount |
| Kiraan Pin | 9 (with exposed pad) | — |
| Cooling | Dual-side cooling capable | — |
| Aras MSL | 1 (per JEDEC J-STD-020) | — |
| Status RoHS | Compliant | Compliant |
| Polarity | N-Channel | — |
| Configuration | Single | — |
| Manufacturer | — | Infineon Technologies |
| Part Number | — | IQDH88N06LM5SCATMA1 |
| Series | — | OptiMOS 5 |
| Drain-Source Voltage (VDS) | — | 60 V |
| Continuous Drain Current (ID, Ta) | — | 42 A |
| Continuous Drain Current (ID, Tc) | — | 447 A |
| On-State Resistance (RDS(on)) | — | 0.7 mOhm at VGS = 10 V |
| Gate-Source Voltage (VGS) | — | +/- 20 V |
| Gate Threshold Voltage (VGS(th)) | — | 1.7 V |
| Total Gate Charge (Qg) | — | 76 nC |
| Input Capacitance (Ciss) | — | 11 nF |
| Output Capacitance (Coss) | — | 2 nF |
| Reverse Transfer Capacitance (Crss) | — | 95 pF |
| Power Dissipation (Ta) | — | 3 W |
| Power Dissipation (Tc) | — | 333 W |