IQDH88N06LM5CGSCATMA1 vs IQDH88N06LM5SCATMA1 Perbandingan
Perbandingan bersamaan detil IQDH88N06LM5CGSCATMA1 dari Infineon dan IQDH88N06LM5SCATMA1 dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.
Infineon
IQDH88N06LM5SCATMA1 - 60V 447A 0.7mOhm OptiMOS 5 N-MOSFET | Infineon
IQDH88N06LM5SCATMA1 ✓ AktifPerbandingan Spesifikasi
| Parameter Umum | IQDH88N06LM5CGSCATMA1 | IQDH88N06LM5SCATMA1 |
|---|---|---|
| Merek | Infineon | Infineon |
| Kategori | MOSFETs | MOSFETs |
| Status Lingkungan Hidup | Aktif | Aktif |
| Tipe Transistor | N-Channel MOSFET | — |
| Technology | OptiMOS 5 (trench) | N-Channel MOSFET (OptiMOS 5) |
| Drain-Source Voltage (V(BR)DSS) | 60 V | — |
| Continuous Drain Current (Ta=25°C) | 42 A | — |
| Arus Alir Berlanjut (TC=25°C) | 447 A | — |
| On-Resistance RDS(on) typical @ VGS=10V | 0.86 mΩ | — |
| Power Dissipation (Ta=25°C) | 3 W | — |
| Dissipasi Listrik (TC=25°C) | 333 W | — |
| Gate Threshold Voltage VGS(th) | [DATA_NEEDED: VGS(th) typical] | — |
| Gate Charge Qg typical | [DATA_NEEDED: Qg typical nC] | — |
| Rentang Suhu Kerja | -55°C to +175°C (TJ) | -55 C to +175 C |
| Paket | PG-WHTFN-9-U02 (PQFN 5x6) | PG-WHSON-8-U02 (source-down, dual-side cooling) |
| Tipe Mounting | Surface Mount | Surface Mount |
| Jumlah Pin | 9 (with exposed pad) | — |
| Cooling | Dual-side cooling capable | — |
| Level MSL | 1 (per JEDEC J-STD-020) | — |
| Status RoHS | Compliant | Compliant |
| Polarity | N-Channel | — |
| Configuration | Single | — |
| Manufacturer | — | Infineon Technologies |
| Part Number | — | IQDH88N06LM5SCATMA1 |
| Series | — | OptiMOS 5 |
| Drain-Source Voltage (VDS) | — | 60 V |
| Continuous Drain Current (ID, Ta) | — | 42 A |
| Continuous Drain Current (ID, Tc) | — | 447 A |
| On-State Resistance (RDS(on)) | — | 0.7 mOhm at VGS = 10 V |
| Gate-Source Voltage (VGS) | — | +/- 20 V |
| Gate Threshold Voltage (VGS(th)) | — | 1.7 V |
| Total Gate Charge (Qg) | — | 76 nC |
| Input Capacitance (Ciss) | — | 11 nF |
| Output Capacitance (Coss) | — | 2 nF |
| Reverse Transfer Capacitance (Crss) | — | 95 pF |
| Power Dissipation (Ta) | — | 3 W |
| Power Dissipation (Tc) | — | 333 W |