IQE008N03LM5ATMA1 vs IQE036N08NM6CGSCATMA1 Ikinahambing
Detalyadong pagkakahiwalay na pagkakahambing ng IQE008N03LM5ATMA1 sa pamamagitan ng Infineon at IQE036N08NM6CGSCATMA1 sa pamamagitan ng Infineon. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.
Infineon
IQE008N03LM5ATMA1 - 30V 0.85mΩ OptiMOS 5 N-Ch MOSFET | Infineon
IQE008N03LM5ATMA1 ✓ NakahandaInfineon
IQE036N08NM6CGSCATMA1 - 80V 118A OptiMOS 6 N-MOSFET | Infineon
IQE036N08NM6CGSCATMA1 ✓ NakahandaPagsanggunian na paghahambing
| Parametro | IQE008N03LM5ATMA1 | IQE036N08NM6CGSCATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Kategorya | MOSFETs | MOSFETs |
| Katayuan ng Lifecycle | Aktibo | Aktibo |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Product Family | OptiMOS 5 | — |
| Polarity / Channel Type | N-Channel | — |
| Drain-Source Voltage (VDS) Max | 30 V | — |
| Continuous Drain Current (ID) at TA=25°C | 27 A | — |
| Continuous Drain Current (ID) at TC=25°C | 253 A | — |
| On-Resistance RDS(on) Typical | 0.85 mΩ (at 20 A, VGS=10 V per LCSC datasheet snippet) | — |
| Gate Threshold Voltage (VGS(th)) | 2 V (at 250 µA per LCSC snippet) | — |
| Power Dissipation at TA=25°C | 2.1 W | — |
| Power Dissipation at TC=25°C | 89 W | — |
| Packhaging | PG-TSON-8-4 (3.3 x 3.3 mm), Source-Down | — |
| Uri ng Pagpapasok | Surface Mount | Surface Mount |
| Hanay ng Temperature na Operasyon | -55°C to +150°C (typical MOSFET junction rating) | -55 C to +150 C (junction, per datasheet derating curves) |
| Gate-Source Voltage (VGS) Max | ±20 V (typical MOSFET rating) | — |
| Technology | OptiMOS 5, Source-Down | Trench MOSFET (OptiMOS 6) |
| Tindminan RoHS | Compliant (per LCSC listing) | Compliant |
| Level ng MSL | [DATA_NEEDED: MSL level] | — |
| Series | — | OptiMOS 6 |
| Part Status | — | Active |
| FET Type | — | N-Channel |
| Drain-Source Voltage (VDS) | — | 80 V |
| Continuous Drain Current (ID) at TA | — | 16.7 A |
| Continuous Drain Current (ID) at TC | — | 118 A |
| Power Dissipation (PD) at TA | — | 2.5 W |
| Power Dissipation (PD) at TC | — | 125 W |
| Packhaging / Kaso | — | PG-WHTFN-9-1 (PQFN 3.3 x 3.3 mm) |
| Configuration | — | Source Down, Center Gate, Dual-Side Cooling |
| Packing | — | Tape and Reel (suffix ATMA1) |
| Voltage Rating | — | 60 V to 100 V category (80 V nominal) |