IQE013N04LM6SCATMA1 vs ISC015N06NM5ATMA1 Perbandingan
Perbandingan bersamaan detil IQE013N04LM6SCATMA1 dari Infineon dan ISC015N06NM5ATMA1 dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.
Infineon
IQE013N04LM6SCATMA1 - 40V 1.35mΩ OptiMOS Source-Down MOSFET | Infineon
IQE013N04LM6SCATMA1 ✓ Aktif
Perbandingan Spesifikasi
| Parameter Umum | IQE013N04LM6SCATMA1 | ISC015N06NM5ATMA1 |
|---|---|---|
| Merek | Infineon | Infineon |
| Kategori | MOSFETs | MOSFETs |
| Status Lingkungan Hidup | Aktif | Aktif |
| FET Type | N-Channel | — |
| Technology | OptiMOS (trench MOSFET) | Trench MOSFET (OptiMOS 5) |
| Drain-Source Voltage (V<sub>DS</sub>) | 40 V | — |
| Gate-Source Voltage (V<sub>GS</sub>) | ±20 V | — |
| R<sub>DS(on)</sub> max @ V<sub>GS</sub>=10 V | 1.35 mΩ | — |
| Continuous Drain Current (I<sub>D</sub>) at T<sub>A</sub>=25 °C | 31 A | — |
| Continuous Drain Current (I<sub>D</sub>) at T<sub>C</sub>=25 °C | [DATA_NEEDED: I_D at T_C] (per distributor listing 205 A pulsed) | — |
| Pulsed Drain Current (I<sub>DM</sub>) at T<sub>C</sub>=25 °C | 205 A | — |
| Power Dissipation (P<sub>D</sub>) at T<sub>A</sub>=25 °C | 2.5 W | — |
| Power Dissipation (P<sub>D</sub>) at T<sub>C</sub>=25 °C | 107 W | — |
| Total Gate Charge (Q<sub>G</sub>) @ V<sub>GS</sub>=10 V | 41 nC | — |
| Output Capacitance (C<sub>oss</sub>) @ V<sub>DS</sub>=20 V | 3800 pF | — |
| Paket | PG-WHSON-8-1 (3.3 mm × 3.3 mm Source-Down PQFN) with exposed pad | PG-TDSON-8 (PQFN 5x6) Drain-Down |
| Tipe Mounting | Surface Mount | Surface Mount |
| Rentang Suhu Kerja | [DATA_NEEDED: T_J min/max] | -55 C to +175 C |
| Status RoHS | Compliant | Compliant |
| Packaging | Tape & Reel | — |
| Part Family | OptiMOS Source-Down, 40 V, 3.3×3.3 PQFN | — |
| Manufacturer | — | Infineon Technologies |
| Product Family | — | OptiMOS 5 |
| Polarity / Channel Type | — | N-Channel |
| Drain-to-Source Voltage (VDS) | — | 60 V |
| Continuous Drain Current (ID) at TA=25C | — | 33 A |
| Pulsed Drain Current (IDM) at TC=25C | — | 259 A |
| On-Resistance RDS(on) typical at VGS=10V | — | 1.5 mOhm |
| Total Power Dissipation (TA) | — | 3 W |
| Total Power Dissipation (TC) | — | 188 W |
| MSL (Moisture Sensitivity Level) | — | 1 |