IQEH84NE2LM7UCGATMA1 vs IQEH54NE2LM7UCGATMA1 Perbandingan
Perbandingan bersamaan detil IQEH84NE2LM7UCGATMA1 dari Infineon dan IQEH54NE2LM7UCGATMA1 dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.
Infineon
IQEH54NE2LM7UCGATMA1 - 25V OptiMOS 7 N-Channel MOSFET | Infineon
IQEH54NE2LM7UCGATMA1 ✓ AktifPerbandingan Spesifikasi
| Parameter Umum | IQEH84NE2LM7UCGATMA1 | IQEH54NE2LM7UCGATMA1 |
|---|---|---|
| Merek | Infineon | Infineon |
| Kategori | MOSFETs | MOSFETs |
| Status Lingkungan Hidup | Aktif | Aktif |
| FET Type | N-Channel | — |
| Technology | OptiMOS 7 (Trench MOSFET) | — |
| Drain-Source Voltage (VDS) | 25 V | 25 V |
| Continuous Drain Current (ID) at Ta | 42 A | 52 A |
| Pulsed Drain Current (IDM) at Tc | 275 A | — |
| Power Dissipation (PD) at Ta | 2.5 W | — |
| Power Dissipation (PD) at Tc | 107 W | — |
| RDS(on) @ VGS=10 V | [DATA_NEEDED: RDS(on) at 10 V] | — |
| RDS(on) @ VGS=4.5 V | [DATA_NEEDED: RDS(on) at 4.5 V] | — |
| Suhu Hubung Kerja | -55 C to +175 C | — |
| Paket | PG-TTFN-9-3 (surface mount, source-down) | PG-TTFN-9-3 |
| Tipe Mounting | Surface Mount | Surface Mount |
| Jumlah Pin | [DATA_NEEDED: pin count from datasheet pinout] | — |
| Status RoHS | Compliant | Compliant |
| Lead-Free | Yes | — |
| Switching Application | Hard- and soft-switching | — |
| Manufacturer | — | Infineon Technologies |
| Product Family | — | OptiMOS 7 Power-Transistor |
| Channel Type | — | N-Channel |
| Continuous Drain Current (ID) at Tc | — | 406 A |
| Power Dissipation at Ta | — | 2.5 W |
| Power Dissipation at Tc | — | 150 W |
| Gate Threshold Voltage (VGS(th)) | — | [DATA_NEEDED: VGS(th) typical/min/max] |
| On-Resistance (RDS(on)) at 10V VGS | — | [DATA_NEEDED: RDS(on) max in mohm at VGS=10V] |
| Total Gate Charge (Qg) | — | [DATA_NEEDED: Qg typical in nC] |
| Rentang Suhu Kerja | — | -55C to +150C (typical MOSFET range) |
| Level MSL | — | [DATA_NEEDED: MSL rating] |