IR2101STRPBF vs IR2181STRPBF Ikinahambing

Detalyadong pagkakahiwalay na pagkakahambing ng IR2101STRPBF sa pamamagitan ng Infineon at IR2181STRPBF sa pamamagitan ng Infineon. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.

Pagsanggunian na paghahambing

Parametro IR2101STRPBF IR2181STRPBF
Brand Infineon Infineon
Kategorya Power MOSFET Drivers Power MOSFET Drivers
Katayuan ng Lifecycle Aktibo Aktibo
Configuration Half-Bridge (High-Side and Low-Side), Independent High and Low Side, Independent
Number of Drivers 2 —
Driver Type Non-Inverting —
Maximum Offset Voltage 600 V —
Gate Drive Supply Voltage (VCC) 10 V to 20 V —
Source Current (Typ.) 210 mA —
Sink Current (Typ.) 360 mA —
Propagation Delay (Typ.) 160 ns —
Rise Time (Typ.) [DATA_NEEDED: rise time] —
Fall Time (Typ.) [DATA_NEEDED: fall time] —
Logic Input Compatibility 3.3 V / 5 V / 15 V CMOS/LSTTL 3.3 V and 5 V
Bootstrap Diode Integrated —
Undervoltage Lockout (UVLO) Yes (VCC and VBS) —
Negative Transient Immunity on VS Yes (dV/dt immune) —
Packhaging 8-SOIC (0.154 inch, 3.90 mm Width) 8-SOIC (0.154", 3.90 mm width)
Uri ng Pagpapasok Surface Mount Surface Mount
Temperature na Operasyon -40 C to +125 C —
Level ng MSL MSL 3 [DATA_NEEDED: MSL level]
Tindminan RoHS Compliant Compliant (PBF suffix)
Input Type — Non-Inverting
Supply Voltage (VCC) — 10 V to 20 V
Output Current (Source) — 1.9 A peak
Output Current (Sink) — 2.3 A peak
High-Side Floating Supply Voltage (VBS) — Up to 600 V offset
Propagation Delay (typ) — 180 ns
Rise Time (typ) — [DATA_NEEDED: rise time]
Fall Time (typ) — [DATA_NEEDED: fall time]
dV/dt Immunity — Yes
Negative Transient Voltage Tolerance — Yes
Undervoltage Lockout — Independent for high-side and low-side
Hanay ng Temperature na Operasyon — -40 C to +125 C
Lead-Free — Yes

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