IR2101STRPBF vs IR2181STRPBF Pengandingan

Pengandingan Sisi Kiri Sisi Kanan Terperinci IR2101STRPBF disebabkan oleh Infineon dan IR2181STRPBF disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.

Pengandingan Spesifikasi

Parametr IR2101STRPBF IR2181STRPBF
Merek Infineon Infineon
Kategori Power MOSFET Drivers Power MOSFET Drivers
Status Lingkungan Hidup Aktif Aktif
Configuration Half-Bridge (High-Side and Low-Side), Independent High and Low Side, Independent
Number of Drivers 2 —
Driver Type Non-Inverting —
Maximum Offset Voltage 600 V —
Gate Drive Supply Voltage (VCC) 10 V to 20 V —
Source Current (Typ.) 210 mA —
Sink Current (Typ.) 360 mA —
Propagation Delay (Typ.) 160 ns —
Rise Time (Typ.) [DATA_NEEDED: rise time] —
Fall Time (Typ.) [DATA_NEEDED: fall time] —
Logic Input Compatibility 3.3 V / 5 V / 15 V CMOS/LSTTL 3.3 V and 5 V
Bootstrap Diode Integrated —
Undervoltage Lockout (UVLO) Yes (VCC and VBS) —
Negative Transient Immunity on VS Yes (dV/dt immune) —
Kemasan 8-SOIC (0.154 inch, 3.90 mm Width) 8-SOIC (0.154", 3.90 mm width)
Jenis Pemasangan Surface Mount Surface Mount
Suhu Operasi -40 C to +125 C —
Aras MSL MSL 3 [DATA_NEEDED: MSL level]
Status RoHS Compliant Compliant (PBF suffix)
Input Type — Non-Inverting
Supply Voltage (VCC) — 10 V to 20 V
Output Current (Source) — 1.9 A peak
Output Current (Sink) — 2.3 A peak
High-Side Floating Supply Voltage (VBS) — Up to 600 V offset
Propagation Delay (typ) — 180 ns
Rise Time (typ) — [DATA_NEEDED: rise time]
Fall Time (typ) — [DATA_NEEDED: fall time]
dV/dt Immunity — Yes
Negative Transient Voltage Tolerance — Yes
Undervoltage Lockout — Independent for high-side and low-side
Gambaran Suhu Operasi — -40 C to +125 C
Lead-Free — Yes

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