IR21531STRPBF vs IR2011STRPBF Comparison

Detailed side-by-side comparison of IR21531STRPBF by Infineon and IR2011STRPBF by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

Specification Comparison

Parameter IR21531STRPBF IR2011STRPBF
Brand Infineon Infineon
Category Power MOSFET Drivers Power MOSFET Drivers
Lifecycle Status Active Active
Stock Status In Stock In Stock
Unit Price (USD) $0.70 $0.71
Configuration Half-Bridge High-Side and Low-Side (Independent)
Driver Type High-side and Low-side, self-oscillating β€”
Number of Outputs 2 (high-side, low-side) β€”
Supply Voltage (VCC) 10 V to 20 V β€”
Internal VCC Clamp 15.6 V β€”
High-Side Offset Voltage up to 600 V β€”
Peak Source/Sink Current 250 mA β€”
Rise Time 80 ns β€”
Fall Time 45 ns β€”
Dead-Time 0.6 microseconds (typical) β€”
Oscillator External RC programmable β€”
Bootstrap Diode Integrated β€”
Input Logic CMOS Schmitt-trigger (RC timing) β€”
Operating Temperature -40C to +125C -40 C to +125 C
Package 8-pin SOIC (SO-8) 8-SOIC (3.90 mm body width)
Mounting Type Surface Mount Surface Mount
Lead Finish Pb-free (PBF suffix) β€”
RoHS Status Compliant (ROHS3) β€”
Number of Drivers β€” 2 (Half-Bridge)
Peak Source Current β€” 1 A (typical)
Peak Sink Current β€” 1 A (typical)
Gate Drive Supply Voltage (VCC) β€” 10 V to 20 V
Floating Supply Voltage (VBS) β€” 10 V to 20 V (operational to +200 V)
Logic Input Compatibility β€” 3.0 V CMOS or LSTTL
Propagation Delay (typ.) β€” 80 ns
Turn-On Rise Time (typ.) β€” 35 ns
Turn-Off Fall Time (typ.) β€” 20 ns
Offset Voltage Rating β€” 200 V
Negative Transient Tolerance β€” dV/dt immune
Lead-Free / RoHS β€” Lead-Free, RoHS Compliant

Datasheets & Resources

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