IR21531STRPBF vs IR2011STRPBF Perbandingan

Perbandingan bersamaan detil IR21531STRPBF dari Infineon dan IR2011STRPBF dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.

Perbandingan Spesifikasi

Parameter Umum IR21531STRPBF IR2011STRPBF
Merek Infineon Infineon
Kategori Power MOSFET Drivers Power MOSFET Drivers
Status Lingkungan Hidup Aktif Aktif
Configuration Half-Bridge High-Side and Low-Side (Independent)
Driver Type High-side and Low-side, self-oscillating —
Jumlah Output 2 (high-side, low-side) —
Supply Voltage (VCC) 10 V to 20 V —
Internal VCC Clamp 15.6 V —
High-Side Offset Voltage up to 600 V —
Peak Source/Sink Current 250 mA —
Waktu naik 80 ns —
Waktu Menurun 45 ns —
Dead-Time 0.6 microseconds (typical) —
Oscillator External RC programmable —
Bootstrap Diode Integrated —
Input Logic CMOS Schmitt-trigger (RC timing) —
Suhu Kerja -40C to +125C -40 C to +125 C
Paket 8-pin SOIC (SO-8) 8-SOIC (3.90 mm body width)
Tipe Mounting Surface Mount Surface Mount
Lead Finish Pb-free (PBF suffix) —
Status RoHS Compliant (ROHS3) —
Number of Drivers — 2 (Half-Bridge)
Peak Source Current — 1 A (typical)
Peak Sink Current — 1 A (typical)
Gate Drive Supply Voltage (VCC) — 10 V to 20 V
Floating Supply Voltage (VBS) — 10 V to 20 V (operational to +200 V)
Logic Input Compatibility — 3.0 V CMOS or LSTTL
Propagation Delay (typ.) — 80 ns
Turn-On Rise Time (typ.) — 35 ns
Turn-Off Fall Time (typ.) — 20 ns
Offset Voltage Rating — 200 V
Negative Transient Tolerance — dV/dt immune
Lead-Free / RoHS — Lead-Free, RoHS Compliant

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